Electronic Supplementary Material (ESI) for RSC Advances. This journal is © The Royal Society of Chemistry 2014
Electronic supplementary information
A Robust and Low-Cost Strategy to Prepare Cu2ZnSnS4 Precursor Solution and Its Application in Cu2ZnSn(S,Se)4 Solar Cells Qingwen Tian,a Yong Cui,b Gang Wang,a* and Daocheng Pana* a: State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun, Jilin, 130022, China
b: Shenyang R&D Center Laboratory for Material Science, Institute of Metal Research, Chinese Academy of Sciences. Wenhua Road 72, Shenyang, 110016, China
E-mail:
[email protected] and
[email protected].
2 cm
Figure S1. A digital photograph of graphite box.
1
2.0 cm
Figure S2. A digital photograph of CZTSSe solar cells.
a Cu 2p1/2
1020
940 950 960 Binding Energy(eV) Sn 3d5/2
Intensity (a.u.)
Sn 3d3/2
485
490 495 Binding Energy(eV)
Zn 2p1/2
c
1030 1040 1050 Binding Energy(eV) S2p
500
160 165 Binding Energy(eV)
Figure S3. XPS spectra of the as-fabricated CZTS thin film. 2
d
Intensity (a.u.)
930
b
Zn 2p3/2 Intensity (a.u.)
In te n s ity (a .u .)
Cu 2p3/2
170
a Cu 2p1/2
940 950 Binding Energy(eV)
Intensity (a.u.)
Sn 3d5/2
485
960
Sn 3d3/2
490 495 Binding Energy(eV)
1030 1040 1050 Binding Energy(eV)
c
d
500
S 2p Se 3p
160 165 Binding Energy(eV)
e
Intensity (a.u.)
Se3d
Zn 2p1/2
1020
Intensity (a.u.)
930
50
55 60 Binding Energy(eV)
65
Figure S4. XPS spectra of the selenized CZTSSe thin film. .
3
b
Zn 2p3/2 Intensity (a.u.)
Intensity (a.u.)
Cu 2p3/2
170
K/S (a.u.) 400
Eg=1.03 eV
600
800
1000
1200
1400
Wavelength (nm) Figure S5. The band gap of selenized CZTSSe thin film was calculated by extrapolating the Kubelka-Munk function to K/S=0.
4
