Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, Nicholas R. Glavin, Andrey A. Voevodin, Justin Brockman, Markus Kuhn, et al. Journal of Electronic Materials ISSN 0361-5235 Volume 45 Number 2 Journal of Elec Materi (2016) 45:983-988 DOI 10.1007/s11664-015-4255-x
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Author's personal copy Journal of ELECTRONIC MATERIALS, Vol. 45, No. 2, 2016
DOI: 10.1007/s11664-015-4255-x 2015 The Minerals, Metals & Materials Society
Band Alignment at Molybdenum Disulphide/Boron Nitride/ Aluminum Oxide Interfaces JENNIFER DISTEFANO,1 YU-CHUAN LIN,1 JOSHUA ROBINSON,1 NICHOLAS R. GLAVIN,2 ANDREY A. VOEVODIN,2,3 JUSTIN BROCKMAN,4 MARKUS KUHN,4 BENJAMIN FRENCH,5 and SEAN W. KING4,6 1.—Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA. 2.—Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433, USA. 3.—Present Address: Department of Materials Science and Engineering, University of North Texas, Texas 76203, USA. 4.—Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, USA. 5.—Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248, USA. 6.—[email protected]
To facilitate the design of future heterostructure devices employing two-dimensional (2D) materials such as molybdenum disulphide (MoS2) and hexagonal/sp2 boron nitride (BN), x-ray photoelectron spectroscopy (XPS) has been utilized to determine the valence band offset (VBO) present at interfaces formed between these materials. For MoS2 grown on a pulsed laser-deposited amorphous BN (a-BN) layer with sp2 bonding, the VBO was determined to be 1.4 ± 0.2 eV. Similarly, the VBO between the a-BN layer and the aluminum oxide (Al2O3) substrate was determined to be 1.1 ± 0.2 eV. Using the bandgaps established in the literature for MoS2, h-BN, and Al2O3, the conduction band offsets (CBOs) at the MoS2/a-BN and a-BN/Al2O3 interfaces were additionally calculated to be 3.3 ± 0.2 and 1.7 ± 0.2 eV, respectively. The resulting large VBOs and CBOs indicate BN and Al2O3 are attractive gate dielectrics and substrates for future 2D MoS2 devices. Key words: Boron nitride, molybdenum disulfide, sapphire, aluminum oxide, x-ray photoelectron spectroscopy, valence band offset, BN, MoS2, Al2O3
Molybdenum disulfide (MoS2) and hexagonal boron nitride (h-BN) are two dimensional (2D) materials of significant interest for future nano-electronic devices.1–3 Due to a wide band gap (6 eV), close lattice matching (