Carrier recombination rates in strained-layer InGaAs ... - Hunter College

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1452. IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 27, NO. 6, JUNE 1991. 4000 Å. **. + + + + * zos htt. +. 70 Å. S. 9. %. (10 o. Mole Fraction. B in. *. 70.