Oct 12, 2017 - To cite this article: Wen Gu, Xiaoqian Feng, Bingxing Yang & Jianhua Zhang (2017) CuPc nanowires transistors fabricated by vacuum thermal ...
Molecular Crystals and Liquid Crystals
ISSN: 1542-1406 (Print) 1563-5287 (Online) Journal homepage: http://www.tandfonline.com/loi/gmcl20
CuPc nanowires transistors fabricated by vacuum thermal deposition Wen Gu, Xiaoqian Feng, Bingxing Yang & Jianhua Zhang To cite this article: Wen Gu, Xiaoqian Feng, Bingxing Yang & Jianhua Zhang (2017) CuPc nanowires transistors fabricated by vacuum thermal deposition, Molecular Crystals and Liquid Crystals, 651:1, 243-249, DOI: 10.1080/15421406.2017.1338409 To link to this article: http://dx.doi.org/10.1080/15421406.2017.1338409
Published online: 12 Oct 2017.
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Date: 15 October 2017, At: 20:23
MOLECULAR CRYSTALS AND LIQUID CRYSTALS , VOL. , – https://doi.org/./..
CuPc nanowires transistors fabricated by vacuum thermal deposition Wen Gu
a
, Xiaoqian Fenga , Bingxing Yanga , and Jianhua Zhangb
a
College of Material Engineering, Shanghai University of Engineering Science, Shanghai, P.R. China; Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, P.R. China
Downloaded by [Southern Cross University] at 20:23 15 October 2017
b
ABSTRACT
KEYWORDS
Organic semiconductor nanowires have received much attention because of their superior performance compared with their thin film counterparts. In this paper, we fabricated large amount of oriented CuPc nanowires by weak epitaxy growth of CuPc on p-6P bilayer. These nanowires possess diameter of 0.4∼1.2 µm and length of several micrometers. With such method, CuPc nanowire transistors can be fabricated, and the high mobility up to 0.37 cm2 /Vs has been realized.
CuPc; nanowire; transistor; thin film
1. Introduction Recently, organic semiconductor nanowires have received much attention because of their superior performance compared with their thin film counterparts [1]. The highly ordered structure and less defect concentration in grain boundaries of organic nanowires open up prospects for the fabrication of high performance organic electronic devices and their circuits [1–3]. For fabricating organic nanowires, solution deposition offers a low-cost and effective way. However, solution deposition may incorporate debris and increase the possibility of contamination at the substrate-nanowire interface [1]. Growth of single-crystal organic nanowires via physical vapor transport is an alternative way that could eliminate contamination [4]. But conventional physical vapor transport still has some drawbacks, for example, low throughput and high melting point of the organic materials [1]. In order to overcome these disadvantages, in this paper, we fabricated large amount of highly orderly organic nanowires by process optimization of weak epitaxy growth of CuPc on p-6P substrate at low temperature (
