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Formation of High-Quality I#III#VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors Renguo Xie, Michael Rutherford, and Xiaogang Peng J. Am. Chem. Soc., Article ASAP • DOI: 10.1021/ja9005767 • Publication Date (Web): 30 March 2009 Downloaded from http://pubs.acs.org on April 1, 2009
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Journal of the American Chemical Society is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036
Formation of High-Quality I-III-VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors Renguo Xie, Michael Rutherford, and Xiaogang Peng* Department of Chemistry and Biochemistry, UniVersity of Arkansas, FayetteVille, Arkansas 72701 Received January 23, 2009; E-mail:
[email protected];
[email protected]
Abstract: A method for the synthesis of nearly monodisperse CuInS2 semiconductor nanocrystals (from
