ELE 412: Semiconductor Devices

11 downloads 95597 Views 131KB Size Report
To understand clearly the basic principles of semiconductor devices ... [1] Anderson, B L, Anderson, R L, Fundamental of Semiconductor Devices, McGraw- Hill, ...
ELE 412: Semiconductor Devices (Fall-2008)

Team Lecturer

Teaching Assistant

Dr Ayhan Ozturk

None

Room Number: 3111

Room Number:

Office Phone: 0212 285 35 54

Office Phone:

E-mail: [email protected]

E-mail:

URL: http://atlas.cc.itu.edu.tr/~ozayan

URL: http://atlas.cc.itu.edu.tr/~

Office Hours: Tuesday, 17:00-17:30;

Office Hours:

Friday,

16:00-17:30

Course CRN: 11267 Prerequisites: None Classroom: D5301 Course Hours: Tue, 14:00-17:00

Timing Calender: September the 15th, 2008 - January the 02th, 2009 Fall Term: • •

Lectures: 12 weeks Exams: 2 weeks

Attendance: •

8 Weeks Lectures + 2 Weeks Exams



Student cannot leave the room up to end of the lecture hour

Assignments are due: 1 week (unless otherwise specified), after issuing

Examination Quizzes:

Books and notebook are closed

Midterm and Final:

Books and notebook are closed Lecture notes (slide handouts ) can be only used during the examination.

Week#

Midterm Exam#1

Midterm Exam#2

Quiz#1

5

10

14

T e c h n i c a l

U n i v e r s i t y

Dr Ayhan Ozturk

1 I s t a n b u l

Grading ELE 412

Number of Exams / Assignments

Partial Weight

Total Weight

Midterm Exam

2

20%

40%

Quizzes

1

08%

08%

Assignments1

3

4%

12%

Ethics

1

+5p

+5p

ABET Paper

For each

+1p

Final Exam

1

40%

40%

1: In case of cancelation of assignments, their points will be added to midterm exams.

Over All Class Assessment: Bell Curve System

Course Objectives At the end of the course, students should be able • • •

To understand clearly the basic principles of semiconductor devices To understand clearly effects of various processes on device characteristics To design new semiconductor devices

Tentative Outlines Lecture#1: Semiconductor Fundamentals •

Introduction



Crystal structures



Bohr’s Atom Model



Energy band diagram



Terms

Lecture#2: Carrier Populations •

Terms



FD Distribution Function



Density of States



Electron population



Hole population



Fermi Levels

Lecture#3: Macroscopic Carrier Transport Dr Ayhan Ozturk

2 I s t a n b u l

T e c h n i c a l

U n i v e r s i t y



Transport Mechanisms



Scattering events



Generation and Recombination Processes



Transport Characteristics



Drift velocity and mobility



Conductivity and Resistivity



Drift and Diffusion Current Densities



Transport Models

Lecture#4 pn Junctions •

Layout and Doping Profile



Electrostatic Characteristics



Energy Band Diagrams

Lecture#5: Non-equilibrium state of pn-junction •

Forward biasing characteristics



Reverse biasing characteristics



Metal-Semiconductor Junctions



Heterostructures

Lecture#6: Metal/Oxide/Semiconductor Stacks •

Band Diagrams



Work functions



Flat-band voltage



MOS Capacitor



MOS Capacitor Operation Modes

Lecture#7 MOS Transistor (MOSFET) •

Fundamentals



MOS Capacitor



I-V Characteristics



Modelling



Oxide Charges

Lecture#8: More on MOSFET •

Threshold Voltage Control



Scaling Theory



Secondary Effects

Lecture#9: pn-Junctions I&V •

I-V characteristics



Generation-Recombination Currents



Transient Characteristics

Lecture#10: Bipolar Junction Transistor (BJT) •

Fundamentals

Dr Ayhan Ozturk

3 I s t a n b u l

T e c h n i c a l

U n i v e r s i t y



I-V Characteristics



Transient Characteristics



Modelling

Lecture#11: Secondary effects in BJTs •

Early effect



Kirk effect



High injection



Current crowding



Non-uniform doping



Band gap narrowing



BJT scaling



BJT Ebers-Moll macro model

Lecture#12: Miscellaneous issues on BJT •

New type of transistors



New device paradigms



Low temperature device operation



Semiconductor characterisation

Text Books [1] Anderson, B L, Anderson, R L, Fundamental of Semiconductor Devices, McGraw-Hill, 2005. [2] Yang, Edward S., Microelectronic Devices, Singapore: McGraw-Hill, 1988.

Ancillaries Some Proprietary Software Packages: • • • • •

PISCES (Stanford University) MINIMOS (Technical University of Vienna) DAMOCLES (IBM) ATLAS (Silvaco: www.silvaco.com ) MEDICI (Synopsys: www.synopsys.com)

Academic Ethics All assignments should be student own work. Simply copping someone else’s homework is unethical. It will be considered as cheating. All kind of cheating will be punished. •

Students are encouraged to discuss the problems together.



It is responsibility of each student to save his/her work.



Cheating in any work brings zero point



Signing in for someone else drops lecture visa

Dr Ayhan Ozturk

4 I s t a n b u l

T e c h n i c a l

U n i v e r s i t y

Dissection of Ethics Points(+5p) • • •

Original HWs: Original Exams: Attendance:

30% 30% 40%

Bibliography [1] Leblebici, D, Elektronik Elemanlari, IST: Sistem, 2002. [2] Streetman, Ben G., Solid State Electronics Devices, 4th Ed., NJ: Prentice-Hall, 1995. [3] Pierret, R F, Semiconductor Device Fundamentals, MA: Addison-Wesley, 1996. [4] Brennan, K, Introduction to Semiconductor Devices, NY: Cambridge University Press, 2005 [5] Taur, Y, Ning, T, Fundamentals of Modern VLSI Devices, NY: Cambridge University Press, 1998. [6] Fonstad, Clifton G., Microelectronic Devices and Circuits, Singapore: McGraw-Hill, 1994. [7] Dutton, R. W., and Yu, Z , Technology CAD, Mass: Kluwer, 1993. [8] Roulston, D J, Bipolar Semiconductor Devices, NY: McGraw-Hill, 1990. [9] Rechard, Muller RS, and Kamins, T I, Device Electronics for Integrated Circuits, NY: Wiley, 1986. [10] Cilingiroglu, U, Systematic Analysis of Bipolar and MOSFET Transistors, Mass: Artech House, 1993. [11] Neamen, D A, Semiconductor Physics and Devices, NY: McGraw-Hill, 2003. [12] Sze, S. M., Physics of Semiconductor Devices, 2nd Ed., Singapore: Wiley, 1981. [13] Wang, Shyh, Fundamentals of Semiconductor Theory and Device Physics, NJ: Prentice-Hall, 1989. [14] Sah, C-T, Fundamentals of Solid-State Electronics, Singapore: World Scientific, 1991. [15] Lundstrom, M, Fundamentals of Carrier Transport, 2nd ed, UK: Cambridge University Press, 2000.

Dr Ayhan Ozturk

5 I s t a n b u l

T e c h n i c a l

U n i v e r s i t y