Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)] Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, and Debdeep Jena Citation: Applied Physics Letters 104, 249902 (2014); doi: 10.1063/1.4884096 View online: http://dx.doi.org/10.1063/1.4884096 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/104/24?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes Appl. Phys. Lett. 104, 203111 (2014); 10.1063/1.4879800 Publisher's Note: “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme” [Appl. Phys. Lett. 104, 133510 (2014)] Appl. Phys. Lett. 104, 199901 (2014); 10.1063/1.4878336 Publisher's Note: “Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing” [Appl. Phys. Lett. 104, 013114 (2014)] Appl. Phys. Lett. 104, 149902 (2014); 10.1063/1.4864791 Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)] Appl. Phys. Lett. 104, 069902 (2014); 10.1063/1.4865900 Comment on “Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors” [Appl. Phys. Lett.84, 1970 (2004)] Appl. Phys. Lett. 86, 016101 (2005); 10.1063/1.1844603
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APPLIED PHYSICS LETTERS 104, 249902 (2014)
Publisher’s Note: “High-voltage field effect transistors with wide-bandgap b-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)] Wan Sik Hwang,1,a) Amit Verma,2 Hartwin Peelaers,3 Vladimir Protasenko,2 Sergei Rouvimov,2 Huili (Grace) Xing,2 Alan Seabaugh,2 Wilfried Haensch,4 Chris Van de Walle,3 Zbigniew Galazka,5 Martin Albrecht,5 Roberto Fornari,5,6 and Debdeep Jena2,a) 1
Department of Materials Engineering, Korea Aerospace University, Gyeonggi, 412791, South Korea Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA 3 Materials Department, University of California Santa Barbara, California 93106, USA 4 IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA 5 Leibniz Institute for Crystal Growth, Max-Born Str., D-12489 Berlin, Germany 6 Department of Physics and Earth Science, University of Parma, Parma, 43124 Italy 2
(Received 27 May 2014; published online 17 June 2014) [http://dx.doi.org/10.1063/1.4884096] As originally published, support from the Army Research Office and the Extreme Science and Engineering Discovery Environment (XSEDE) was omitted from the Acknowledgments. The full Acknowledgments appears correctly below: This research made use of the Center for Nano Science and Technology at University of Notre Dame which was supported by the Semiconductor Research Corporation (SRC), Nanoelectronics Research Initiative (NRI) and the National Institute of Standards and Technology (NIST)
through the Midwest Institute for Nanoelectronics Discovery (MIND), STARnet, an SRC program sponsored by MARCO and DARPA, by the Office of Naval Research (ONR) and the National Science Foundation (NSF), and by the Army Research Office (W911NF-13-1-0380). Computational resources were provided by the Extreme Science and Engineering Discovery Environment (XSEDE), supported by NSF (OCI-1053575 and DMR07-0072N). All online versions of the article were corrected on 29 May 2014.
a)
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