Highly Sensitive Radio-Frequency UV Sensor Based on Photocapacitive Effect in GaN Venkata S. Chivukula1, Daumantas Čiplys1,2, Albertas Sereika2, Michael S. Shur1, Jinwei Yang3 and Remis Gaska3 1
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA 2 Department of Radiophysics, Vilnius University, Vilnius 10222, Lithuania 3 Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, USA
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Abstract— We demonstrate a novel highly sensitive UV sensor based on RF LC oscillator with an optical frequency modulation due to the photocapacitive effect in an interdigitated Aluminum-on-GaN/sapphire structure. In the range from 280 nm to 325 nm, the sensor exhibits extremely high sensitivity of 60 KHz/µW/cm2 at low UV powers (
