II-VI 2013 Program

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Sep 9, 2013 ... Kobayashi, Tomohiro Shiraishi, Shingo Taka- matsu, and Katsumi Kishino. Sophia University, Japan. Tu-P28. Microstructuring of a ZnSe-based ...
II-VI 2013 Program Sept. 9

Opening 12:30 - 13:00

Sept. 9

Mo-A

Solar Cells 13:00 - 14:30 Chair : K.Ichino, Tottori Univ.

Mo-A1 (invited) 13:00 - 13:30 Nanocrystal Ink Based Route for Quaternary Chalcogenides Solar Cells *Rakesh Agrawal School of Chemical Engineering, Purdue University, United States of America

Mo-A2 13:30 - 13:45 Vertical Correlation and Miniband Formation in Submonolayer Zn(Cd)Te/ZnCdSe Quantum Dots for Intermediate Band Photovoltaics *Siddharth Dhomkar(*1,*2), Uttam Manna(*3), Maria C. Tamargo(*2,*4), I. Cevdet Noyan(*3), and Igor L. Kuskovsky(*1,*2) (*1)Department of Physics, Queens College of CUNY, United States of America, (*2)The Graduate Center, CUNY, United States of America, (*3)Department of Applied Physics and Applied Mathematics, Columbia University, United States of America, and (*4)Department of Chemistry, City College of CUNY, United States of America

Mo-A3 13:45 - 14:00 Group II-VI Transparent Conductors for Full Spectrum Photovoltaics *Kin Man Yu(*1), Guibin Chen(*1,*2), Douglas M. Detert(*1,*3), Lothar A. Reichertz(*1,*4), Kyle Tom(*1,*3), Oscar D. Dubon(*1,*3), and Wladek Walukiewicz(*1) (*1)Lawrence Berkeley National Laboratory, Materials Science Division, United States of America, (*2)Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, China, (*3)Department of Materials Science and Engineering, University of California, Berkeley, United States of America, and (*4)RoseStreet Labs Energy, Phoenix, Arizona, United States of America

Mo-A4 14:00 - 14:15 Characterization of Ag/ZnO Based Metal Dielectric Multilayer (MDM) Transparent Conductive Film *Akihiko Kikuchi, Shinya Shirasaki, and Ryo Kita Department of Engineering and Applied Sciences, Sophia University, Japan

Mo-A5 14:15 - 14:30 Sputtering-Assisted Metal-Organic Chemical Vapor Deposition of Yb-Doped ZnO for Photonic Conversion in Si Solar Cells *Ryutaro Okada, Wei Miao, Yoshikazu Terai, Takahiro Tsuji, and Yasufumi Fujiwara Division of Materials and Manufacturing Science, Osaka University, Japan

Mo-B

Sept. 9

Growth and Characterization I 15:00 - 16:30 Chair : R.Agrawal, Purdue Univ.

Mo-B1 (invited) 15:00 - 15:30 Application of Solar Cell Using II-III-VI Compound Thin-Film Fabricated by the Conventional Sputtering Process *Hiroshi Deguchi Research and Development Group, Ricoh Co., Ltd., Japan

Mo-B5 Acceptor Levels ZnMgO:N

Probed

16:15 - 16:30 by DLOS in

Alejandro Kurtz(*1), *Adrian Hierro(*1), Gema ˜ Tabares(*1), Elias Munoz(*1), Sanjay Kumar Mohanta(*2), Atsushi Nakamura(*2), and Jiro Temmyo(*2) (*1)ISOM and Dept. Electrical Eng., Technical University of Madrid, Spain and (*2)Research Institute of Electronics, Shizuoka University, Japan

Sept. 9

Mo-C

Photodetectors Mo-B2 15:30 - 15:45 Growth of AgGaTe2 Layers on a- and cPlane Sapphire Substrates by a Closed Space Sublimation Method *Aya Uruno(*1), Ayaka Usui(*1), and Masakazu Kobayashi(*1,*2) (*1)Department of Electrical Engineering and Bioscience, Waseda University, Japan and (*2)Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Japan

Mo-B3 15:45 - 16:00 Substrate Recycling from Epitaxial Liftoff of II-VI semiconductors Akhil Rajan, *Richard T. Moug, Ian A. Davison(*1,*2), and Kevin A. Prior (*1)Heriot Watt University, United Kingdom and (*2)KOMKO, Stockholm University, Sweden

Mo-B4 16:00 - 16:15 Ultrasonc-Assisted Mist Chemical Vapor Deposition of II-Oxide and Related Oxide Compounds *Shizuo Fujita(*1), Kentaro Kaneko(*2), Toshiyuki Kawaharamura(*3), and Mamoru Furuta(*3) (*1)Photonics and Electronics Science and Engineering Center, Kyoto University, Japan, (*2)Department of Materials Chemistry, Kyoto University, Japan, and (*3)Research Institute for Nanotechnology, Kochi University of Technology, Japan

17:00 - 18:15 Chair : T.Tanaka, Saga Univ.

Mo-C1 (invited) 17:00 - 17:30 High Operating Temperature, Nonequilibrium HgCdTe Photovoltaic Devices Grown by Molecular Beam Epitaxy Silviu Velicu(*1), Fikri Aqariden(*1), and *Sivalingam Sivananthan(*2) (*1)EPIR Technologies, Inc., United States of America and (*2)University of Illinois at Chicago, United States of America

Mo-C2 17:30 - 17:45 High Performance Quantum-Well Infrared Photodetectors Made from Wide Band Gap II-VI Semiconductors *Aidong Shen(*1), Arvind Pawan Ravikumar(*2), Guopeng Chen(*1), Kuaile Zhao(*1), Yue Tian(*2), Paul Prucnal(*2), Maria C. Tamargo(*1), and Claire Gmachl(*2) (*1)City College of New York, United States of America and (*2)Princeton University, United States of America

Mo-C3 17:45 - 18:00 Low Dark Current and Stable Ultraviolet Avalanche Photodiode (APD) of Organic (PEDOT:PSS) - Inorganic (ZnSSe) Hybrid Junction Structure *Tomoki Abe, Noriyuki Ikadatsu, Ryoichi Inoue, Takeru Fujimoto, Yusuke Inagaki, Masahiro Ebisu, Hirofumi Kasada, and Koshi Ando Tottori University, Japan

Mo-C4 18:00 - 18:15 Dual-Band MgZnO Ultraviolet Photodetector Integrated with Si Yaonan Hou(*1), *Zengxia Mei(*1), Huili Liang(*1), Daqian Ye(*1), Changzhi Gu(*1), A. Yu. Azarov(*2), A. Yu. Kuznetsov(*2), Yicheng Lu(*3), and Xiaolong Du(*1) (*1)Institute of Physics, Chinese Academy of Sciences, China, (*2)University of Oslo, Norway, and (*3)Rutgers University, United States of America

Tu-A

Sept. 10

Spin and Magnetic Materials 8:45 - 10:30 Chair : R.B.James, Brookhaven Natl. Lab.

Tu-A1 (invited) 8:45 - 9:15 Giant Spin Splitting in ZnMnTe/ZnMgTe Core/Shell Nanowires *Piotr Wojnar(*1), Elzbieta Janik(*1,*2), Jan Suf´ fczynski(*2), Joanna Papierska(*2), Malgorzata Szymura(*1), Wojciech Zaleszczyk(*1), Łukasz Kłopotowski(*1), Slawomir Kret(*1), Tomasz Wojciechowski(*1), Lech Tomasz Baczewski(*1), Tomasz Wojtowicz(*1), Grzegorz Karczewski(*1), and Jacek Kossut(*1) (*1)Institute of Physics, Polish Academy of Sciences, Poland and (*2)University of Warsaw, Poland

Tu-A2 9:15 - 9:30 Effects of Weak Light-Matter Coupling in ZnTe-based Micropillar and Planar Cavities with CdTe Quantum Dots *Tomasz

Jakubczyk(*1,*2), Tomasz ´ Smolenski(*1), Wojciech Pacuski(*1,*2), Andrzej Golnik(*1), Matthias Florian(*3), Frank Jahnke(*3), Carsten Kruse(*2), Helena ¨ Franke(*4), Rudiger Schmidt-Grund(*4), Marius Grundmann(*4), Detlef Hommel(*2), and Piotr Kossacki(*1) (*1)Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland, (*2)Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, Germany, (*3)Institute of Theoretical Physics, University of Bremen, Germany, and (*4)Institute for Experimental Physics II, Semiconductor Physics Group, University of Leipzig, Germany

Tu-A3 9:30 - 9:45 Magnetic Polaron Formation in Neutral and Negatively Charged (Cd,Mn)Te Quantum Dots *David Ferrand(*1), Petr Stepanov(*1), Ilya Akimov(*2), Herve Boukari(*1), Dimitri Yakovlev(*2), and Joel Cibert(*1) (*1)Joint group CNRS-CEA ”Nanophysique et semiconducteurs”, Institut Neel-CNRS, Universite´ ´ Joseph Fourier, France and (*2)TU Dortmund Experimentelle Physik 2, Germany

Tu-A4 9:45 - 10:00 Magneto-Photoluminescence Studies of MBE-grown Cobalt-based Dilute Magnetic Semiconductors Michal Papaj, Jakub Kobak, Piotr Piotrowski, Jean Guy Rousset, Elzbieta Janik, Michal Nawrocki, Piotr Kossacki, Andrzej Golnik, and *Wojciech Pacuski Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland

Tu-A5 10:00 - 10:15 Spin Manipulation in a GaAs/AlGaAs/ ZnMnSe Heterovalent Quantum Well Structure

Tu-B3 11:45 - 12:00 Vapor Transport Deposition of Large-Area Polycrystalline CdTe for Radiation Image Sensor Application

Alexey A. Toropov, Vadim Kh. Kaibyshev, Fabio Liaci, Grigorii V. Klimko, Irina V. Sedova, Sergey V. Sorokin, and *Sergey V. Ivanov Ioffe Physical-Technical Institute, Russia

*Keedong Yang, Bokyung Cha, Duchang Heo, and

Tu-A6 10:15 - 10:30 Unstrained Singly Mn-doped Quantum Dots

Tu-B4 12:00 - 12:15 Vapor-Phase Epitaxial Growth of Thick Single Crystal CdTe on Si Substrate for XRay, Gamma-Ray Spectroscopic Detector Development

Lucien Besombes and *Herve Boukari CEA-CNRS group Nanophysique et semiconducteurs, Institut Neel-CNRS/UJF, France

Tu-B

Sept. 10

Sungchae Jeon Korea Electrotechnology Research Institute, Republic of Korea

*Madan

Niraula, Kazuhito Yasuda, Hayate Yamashita, Yuto Wajima, Yudai Tsukamoto, Masahiko Matsumoto, Yuta Suzuki, Noriaki Takai, Yuki Tsukamoto, and Yasunori Agata Nagoya Institute of Technology, Japan

X- and γ - Ray Detectors 11:00 - 12:15 Chair : S.Sivananthan, Univ. of Illinois at Chicago

Sept. 10

Tu-P

Poster Session A Tu-B1 (invited) 11:00 - 11:30 Cadmium Zinc Telluride X- and GammaRay Detectors: Past, Present and Future

19:00 - 21:00

*Ralph B. James(*1), Aleksey E Bolotnikov(*1), Giuseppe S. Camarda(*1), Yonggang Cui(*1), Petro M Fochuk(*1,*2), Vaclav Dedic(*1,*3), Jan Franc(*3), Ki-Hyun Kim(*1,*4), Utpal Roy(*1), and Yang Ge(*1) (*1)Brookhaven National Laboratory, United States of America, (*2)Chernivtsi National University, Ukraine, (*3)Charles University Prague, Czech Republic, and (*4)Korea University, Republic of Korea

Tu-P1 Characterization of p-type Cu2O Thin Films Fabricated by Mist CVD Method

Tu-B2 11:30 - 11:45 Time-of-Flight Measurements on Schottky CdTe Nuclear Detectors *Kazuhiko Suzuki(*1), Yoshihiro Ichinohe(*1), Takayuki Sawada(*1), Kazuaki Imai(*1), and Satoru Seto(*2) (*1)Hokkaido Institute of Technology, Japan and (*2)Ishikawa National College of Technology, Japan

*Takumi Ikenoue, Shin-Ichi Sakamoto, Yoshitaka Inui The University of Shiga Prefecture, Japan

and

Tu-P2 Growth of Zinc Oxide on Pyrolytic Graphite Sheet by Mist Chemical Vapor Deposition *Shunsuke

Kake, Kazuyuki Uno, Ikuhiro Furotani, Yuichiro Yamazaki, and Ichiro Tanaka Wakayama University, Japan

Tu-P3 Control of Density of CdSe Quantum Dots Grown by MEE on MgS Akhil Rajan, *Richard T. Moug, and Kevin A. Prior Heriot Watt University, United Kingdom

Tu-P4 Molecular Beam Epitaxy and Strain Compensation in High-Efficiency II-VI/GaAs Laser Heterostructures for Yellow Spectral Range *Sergey V. Gronin, Sergey V. Sorokin, Irina V. Sedova, Grigorii V. Klimko, and Sergey V. Ivanov Ioffe Physical-Technical Institute of RAS, Russia

Tu-P5 Selective MBE Growth of ZnSe-based Nanostructures on Mesa-patterned GaAs Substrate *Tsutomu Muranaka, Akihiro Higuchi, Hiroki Asano, Shun Ueno, Masanori Nakamura, Yoichi Nabetani, and Takashi Matsumoto Department of Electrical and Electronic Engineering, University of Yamanashi, Japan

Tu-P6 Effect of Thermal Annealing on AGZO Films Deposited on p-GaN by RF Magnetron Sputtering *Taekkyun Kim(*1), Hyunjun Choi(*1), Hodol Yoo(*1), Rowoon Lee(*1), Seungho Yang(*2), JeeYoung Chang(*2), and Kyoung-Kook Kim(*1) (*1)Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea and (*2)Heesung Metal LTD., Republic of Korea

Tu-P7 In-plane Radiative Recombination Channel of a Dark Exciton in Self-Assembled Quantum Dots *Tomasz

´ Smolenski(*1), Tomasz Kazimierczuk(*1), Mateusz Goryca(*1), Tomasz Jakubczyk(*1), Łukasz Kłopotowski(*2), Łukasz ´ Cywinski(*2), Piotr Wojnar(*2), Andrzej Golnik(*1), and Piotr Kossacki(*1) (*1)Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland and (*2)Institute of Physics, Polish Academy of Sciences, Poland

Tu-P8 Process Simulation and Analysis for Geometry Structure of CdZnTe Polycrystalline Film Detectors *Beiling Yao, Jian Huang, Jie Zhou, Ke Tang, Lei Zhang, Junnan Wang, Yue Zhu, Yiben Xia, and Linjun Wang Department of Materials science and engineering, Shanghai University, China

Tu-P9 Synthesis of Wurtzite MgxZn1-xO by Remote-Plasma Enhanced MOCVD with MeCp2Mg Nobuaki Ohmura, Sanjay Kumar Mohanta, *Atsushi Nakamura, and Jiro Temmyo Grad. School of Eng. Shizuoka University, Japan

Tu-P10 Effects of Thermal Expansion in ZnTe Epilayers on GaAs and InP Substrates *Satoru Seto(*1), Satoru Yamada(*1), Kazuhiko Suzuki(*2), Kenichiro Matsumoto(*3), Shoichi Nakamura(*3), and Masaaki Adachi(*3) (*1)Ishikawa National College of Technology, Japan, (*2)Hokkaido Institute of Technology, Japan, and (*3)Kanazawa University, Japan

Tu-P11 Effects of Growth Temperature Cd1-xZnxTe Thin Films Deposited Close-Spaced Sublimation

on by

*Run Xu, Haitao Xu, Ye Yuan, Jian Huang, Jijun Zhang, Ke Tang, and Linjun Wang Department of Materials Science and Engineering, Shanghai University, China

Tu-P12 Te Inclusions in CdMnTe Crystal Grown by the Traveling Heater Method and Their Effects on the Electrical Properties Shen Ping, *Jijun Zhang, Linjun Wang, Jiahua Min, Jian Huang, Xiaoyan Liang, Ke Tang, Min Shen, Lin Wang, and Yiben Xia School of materials science and engineering, Shanghai University, China

Tu-P13 Growth and Characterization of ZnMgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy *Kosuke Mizoguchi(*1), Yasuhiro Nagao(*1), Tooru Tanaka(*1,*2), Katsuhiko Saito(*1), Qixin Guo(*1), and Mitsuhiro Nishio(*1) (*1)Department of Electrical and Electronic Engineering, Saga University, Japan and (*2)PRESTO, Japan Science and Technology Agency (JST), Japan

Tu-P14 Growth and Characterization of Submonolayer Zn(Cd)Te/ZnCdSe Type-II Quantum Dots for Intermediate Band Solar Cell Applications *Siddharth Dhomkar(*1,*2), Uttam Manna(*3), Maria C. Tamargo(*2,*4), I. Cevdet Noyan(*3), and Igor L. Kuskovsky(*1,*2) (*1)Department of Physics, Queens College of CUNY, United States of America, (*2)The Graduate Center, CUNY, United States of America, (*3)Department of Applied Physics and Applied Mathematics, Columbia University, United States of America, and (*4)Department of Chemistry, City College of CUNY, United States of America

Tu-P15 Fabrication of Cu2ZnSnS4 Films Sulfurized by Using Diethylsulfur *Masahiro Tahashi(*1), Kenji Yoshino(*2), Makoto Takahashi(*3), and Hideo Goto(*1) (*1)Department of Electrical Engineering, Chubu University, Japan, (*2)Department of Electrical and Electronic Engineering, University of Miyazaki, Japan, and (*3)Departmentof Applied Chemistry, Chubu University, Japan

Tu-P16 The Influence of Oblique Deposited Angle on Metal Enhanced Fluorescence Property of Ag and Ag/ZnO Core-Shell Structure *Yanli Ding, Yue Zhao, Xiang Peng, Xiaoyan Liang, Lin Wang, Jiahua Min, Linjun Wang, and Weimin Shi Department of Electronic Information Materials, Shanghai Leading Academic Disciplines, Shanghai University, China

Tu-P17 1H Solid-State NMR Characterization of Aqueous Grown ZnO Nanorods with Different Growth Temperatures *K. Ogata(*1), S. Sasa(*1), M. Yano(*1), and K. Nishimura(*2) (*1)Osaka Institute of Technology, Japan and (*2)Institute for Molecular Science, Japan

Tu-P18 Direct Growth of ZnSe and CdSe on (100) InAs Substrates *Richard T Moug, Silvia Butera, Peter Vines, Gerald Buller, and Kevin A Prior Heriot Watt University, United Kingdom

Tu-P19 Submonolayer ZnMgTe/ZnSe Dots: A Structural Analysis

Quantum

Uttam Manna(*1), Siddharth Dhomkar(*2), Ismail C. Noyan(*1), Qiang Zhang(*3), Maria C. Tamargo(*3), Kathleen A. Dunn(*4), Steven W. Novak(*4), and *Igor L. Kuskovsky(*2) (*1)Department of Applied Physics & Applied Mathematics, Columbia University, United States of America, (*2)Department of Physics, Queens College of CUNY, United States of America, (*3)Department of Chemistry, City College of CUNY, United States of America, and (*4)College of Nanoscale Science and Engineering, University at AlbanySUNY, United States of America

Tu-P20 Fermi-Level Pinning by Carrier Compensating Mid-gap Donor Defect-Band in Homo-Epitaxially Grown p-type ZnO by MBE *Takuya Masamoto, Keisuke Noda, Takuro Matsuo, Akimasa Akiyama, Takaaki Yukue, Shinya Hiroe, Tomoki Abe, Hirofumi Kasada, and Koshi Ando Tottori University, Japan

Tu-P21 Photo-EPR and Photoluminescence Excitation Studies of Defects/Impurities Responsible for Upconversion Effects in Bulk ZnO Crystals *Jan Eric Stehr, Shula Chen, Weimin Chen, and Irina Buyanova Department of Physics, Chemistry and Biology, Linkoping University, Sweden

Tu-P22 Tuning between Quantum-Dot and Quantum-Well-Like Behaviors in Type-II ZnTe Sub-Monolayer Quantum Dots by Controlling Tellurium Flux during MBE Growth *Haojie Ji(*1,*3), Bidisha Roy(*1,*3), Siddharth Dhomkar(*1,*3), Richard T. Moug(*2), Maria C. Tamargo(*2,*3), Alice Wang(*4), and Igor L. Kuskovsky(*1,*3) (*1)Department of Physics, Queens College of CUNY, United States of America, (*2)Department of Chemistry, City College of CUNY, United States of America, (*3)The Graduate Center of CUNY, United States of America, and (*4)Evans Analytical Group, United States of America

Tu-P23 Effect of Ag-doping and Hydrothermal Treatment on Structural and Luminescent Properties of ZnO Thin Films V. S. Khomchenko(*1), * V. I. Kushnirenko(*1), P. V. Demydiuk(*2), Yu. P. Piryatinskii(*3), O. S. Lytvyn(*1), V. E. Rodionov(*1), and T. V. Zashivailo(*4) (*1)V.Lashkarev Institute of Semiconductor Physics, Ukraine, (*2)Institute of Materials Science Problems, Ukraine, (*3)Institute of Physics, Ukraine, and (*4)National Technical University of Ukraine KPI, Ukraine

Tu-P24 Vacancies in II-VI Compounds: Energy Levels and their Effects on the Electronic Properties of Radiation Detectors *Ralph Volodymyr Babentsov(*1) and B. James(*2) (*1)Department for Physics and Technology of Low-Dimensional Systems, Institute of Semiconductor Physics, Kiev, Ukraine, Ukraine and (*2)Department of Nonproliferation and National Security, Brookhaven National Laboratory, Upton, NY, USA, United States of America

Tu-P25 Photoluminescence Study of Excitons in Cu2O Films by Defects Manipulation J. Q. Li(*1), Z. X. Mei(*1), H. L. Liang(*1), A. Galeckas(*2), Andrej Yu Kuznetsov(*2), D. Q. Ye(*1), L. S. Liu(*1), Y. P. Liu(*1), and *X. L. Du(*1) (*1)Institute of Physics, Chinese Academy of Sciences, China and (*2)Department of Physics, University of Oslo, Norway

Tu-P26 Characteristics of Carrier Transport in Highly Transparent Conductive Ga-Doped ZnO Films *Tetsuya Yamamoto(*1), Huaping Song(*1), Hisao Makino(*1), Jun-ichi Nomoto(*1), Seiichi Kishimoto(*1,*2), and Tomoaki Terasako(*3) (*1)Kochi University of Technology, Japan, (*2)Kochi National College of Technology, Japan, and (*3)Ehime University, Japan

Tu-P27 Wide-Range Visible Luminescence of ZnCdSe/BeZnTe Type-II Superlattices Grown on InP Substrates *Keisuke Murakami, Ichirou Nomura, Toshiki Kobayashi, Tomohiro Shiraishi, Shingo Takamatsu, and Katsumi Kishino Sophia University, Japan

Tu-P28 Microstructuring of a ZnSe-based Microcavity for Strong Coupling phenomena in Structures with Confined Polaritons *Thorsten Klein(*1), Sebastian Klembt(*1,*2), Emilien Durupt(*2), Maxime Richard(*2), Carsten Kruse(*1), and Detlef Hommel(*1) (*1)Institute of Solid State Physics, University of Bremen, Germany and (*2)CNRS, Institute Neel, France

Tu-P29 Correlated Trions and Conduction Band Holes: Possible Observation of the Suris Tetron in n-doped (Cd,Mn)Te Quantum Wells *A. V. Koudinov(*1), C. Kehl(*2), A. V. Rodina(*1), G. V. Astakhov(*2), J. Geurts(*2), D. Wolverson(*3), and G. Karczewski(*4) (*1)A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, Russia, (*2)Physikalisches Institut, Universit¨ at W¨ urzburg, Germany, (*3)Department of Physics, University of Bath, United Kingdom, and (*4)Institute of Physics, Polish Academy of Sciences, Poland

Tu-P30 Photocurrent Property of ZnTeO Layer *Junichi Hinata, Naoki Tsuboya, Yoichi Nabetani, Tsutomu Muranaka, and Takashi Matsumoto University of Yamanashi, Japan

Tu-P31 Hybrid Functional Studies of the Cadmium Vacancy in CdTe *Run Xu(*1), Ye Yuan(*1), Minyan Tang(*1), Haitao Xu(*1), Linjun Wang(*1), and Yanyan Zhu(*2) (*1)Department of Materials Science and Engineering, Shanghai University, Shanghai, China and (*2)Department of Mathematics and Physics,Shanghai University of Electric Power, Shanghai, China

Tu-P32 Optical Properties of ZnTe and CdTe/ZnTe Nanowires *Alberto Artioli(*1), Petr Stepanov(*1), Pamela Rueda-Fonseca(*1), Jean Philippe Poizat(*1), Gilles Nogues(*1), Fabrice Donatini(*1), Edith Bellet-Amalric(*2), Martien den Hertog(*1), Catherine Bougerol(*1), Yann Genuist(*1), Regis Andre(*1), Kuntheak Kheng(*2), Joel Cibert(*1), Serge Tatarenko(*1), and David Ferrand(*1) (*1)CEA/CNRS joint team, Nanophysics and Semiconductors, Institut Neel-CNRS,Universite´ Joseph Fourier, France and (*2)CEA/INAC/SP2M, France

Tu-P33 Cooling Process Optimization to Control Te Inclusions for Improving CZT Detector Performance

Tu-P38 Modulation of Ferromagnetism by Applied Electric Fields in the Hexagonal CrTe Thin Film

Jiahua Min, *Xiaoyan Liang, Sheng Yang, Binbin Shi, Jijun Zhang, Linjun Wang, and Weimin Shi Department of Electronic Information Materials, Shanghai University, China

*Ryota Akiyama, Haruyoshi Oikawa, Kazuma Yamawaki, and Shinji Kuroda Institute of Materials Science, University of Tsukuba, Japan

Tu-P34 Comparison in Internal Strain Sensitivity between Polariscopy and Raman Spectroscopy in a ZnTe Single Crystal

Tu-P39 Spin Dynamics of a Mn Atom in a SelfAssembled Quantum Dot under Resonant Optical Excitation

*Hideo Takeuchi Department of Applied Physics, Graduate School of Engineering, Osaka City University, Japan

Segolene Jamet, *Herve Boukari, and Lucien Besombes CEA-CNRS group Nanophysique et semiconducteurs, Institut Neel-CNRS/UJF, France

Tu-P35 Characterization of ZnTe and ZnTeO Alloy by DLTS *Naoki Tsuboya, Junichi Hinata, Yoichi Nabetani, Tsutomu Muranaka, and Takashi Matsumoto University of Yamanashi, Japan

Tu-P36 Nonlinear Effects in Coherent Propagation of Exciton-Polaritons in ZnO *Tatiana V. Shubina(*1), Nicolay A. Gippius(*2), Alexey A. Toropov(*1), Galia Pozina(*3), Mikhail M. Glazov(*1), Peder P. Bergman(*3), and Bo Monemar(*3) (*1)Ioffe Physical-Technical Institute of RAS, Russia, (*2)A.M. Prokhorov General Physics Institute of RAS, Russia, and (*3)Department of Phys., Chem. and Biol., Link¨oping University, Sweden

Tu-P37 Effect of an Electric Field on Magnetism of Ferromagnetic Semiconductor (Zn,Cr)Te *Haruyoshi Oikawa, Ryota Akiyama, and Shinji Kuroda Institute of Materials Science, University of Tsukuba, Japan

Tu-P40 Optical Study of Electron-Electron Exchange Interaction in CdTe/ZnTe Quantum Dots *Tomasz

´ Smolenski(*1), Tomasz Kazimierczuk(*1), Jakub Kobak(*1), Mateusz Goryca(*1), Wojciech Pacuski(*1), Andrzej Golnik(*1), Krzysztof Fronc(*2), Łukasz Kłopotowski(*2), Piotr Wojnar(*2), and Piotr Kossacki(*1) (*1)Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland and (*2)Institute of Physics, Polish Academy of Sciences, Poland

Tu-P41 The Time Resolved Studies of Magnetic Fluctuations in a few Spin System Realized with CdTe/ZnTe Quantum Dots Doped with Mn2+ Ions. *Maciej Koperski(*1), Mateusz Goryca(*1), Filip Malinowski(*1), Tomasz Smolenski(*1), Andrzej Golnik(*1), Piotr Wojnar(*2), and Piotr Kossacki(*1) (*1)Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland and (*2)Institute of Physics, Polish Academy of Sciences, Poland

Tu-P42 (late news) Identification of Recombination Centers Responsible for Reduction of Energy Conversion Efficiency in p-ZnTe/n-CdTe Solar Cells *Grzegorz Karczewski(*1), Sergij Chusnutdimow(*1), Karolina Olender(*1), Tadeusz Wosinski(*1), Tomasz Wojtowicz(*1), Eunika Zielony(*2), Ewa Placzek-Popko(*2), Anna Racino(*2), and Zbigniew Gumienny(*2) (*1)Institute of Physics, Polish Academy of Sciences, Warsaw, Poland and (*2)Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland

Tu-P43 (late news) Distribution of Cu2-δ Se Formed in Cu(In,Ga)Se2 Prepared by Three Stage Process *Takehiro Nazuka(*1), Yutaro Takabayashi(*1), Takeaki Sakurai(*1), Akimasa Yamada(*2), Shogo Ishizuka(*2), Koji Matsubara(*2), Shigeru Niki(*2), and Katsuhiro Akimoto(*1) (*1)University of Tsukuba, Japan and (*2)Research Center for Photovoltaic, National Institute of Advanced Industrial Science and Technology, Japan

Tu-P44 (late news) Optical Characterization of Cu(In,Ga)Se2 Thin Film by Two Wavelength Excited Photoluminesence Spectroscopy *Hideki Hagiya(*1), Amit Gupta(*1), Norimu Hiraoka(*1), Takeaki Sakurai(*1), Koji Matsumura(*2), Akimasa Yamada(*2), Shogo Ishizuka(*2), Shigeru Niki(*2), and Katsuhiro Akimoto(*1) (*1)Tsukuba University, Japan and (*2)National Institute of Advanced Industrial Science and Technology, Japan

Sept. 11

We-A

ZnO-related Devices and Physics 8:45 - 10:30 Chair : P.Wojnar, Polish Academy of Sciences

We-A1 (invited) Electron Mobility erostructures

in

8:45 - 9:15 ZnO-Based Het-

*Akira Ohtomo Department of Applied Chemistry, Tokyo Institute of Technology, Japan, Materials Research Center for Element Strategy, Tokyo Institute of Technology, Japan, and ALCA, Japan Science and Technology Agency, Japan

We-A2 Enhancement-Mode ZnO/MgxZn1-xO on Si

TFT

9:15 - 9:30 Using

*Daqian Ye(*1), Zengxia Mei(*1), Huili Liang(*1), Changzhi Gu(*1), A. Yu. Azarov(*2), A. Yu. Kuznetsov(*2), Wen Chiang Hong(*3), Yicheng Lu(*3), and Xiaolong Du(*1) (*1)Institute of Physics, Chinese Academy of Sciences, China, (*2)University of Oslo, Norway, and (*3)Rutgers University, United States of America

We-A3 9:30 - 9:45 Optical and Transport Shubnikov-de Haas Oscillation in ZnO Two-dimensional Electron Systems *Yasutaka Imanaka(*1), Tadashi Takamasu(*1), Hitoshi Tampo(*2), Hajime Shibata(*2), and Shigeru Niki(*2) (*1)National Institute for Materials Science, Japan and (*2)National Institute of Advanced Industrial Science and Technology, Japan

We-A4 9:45 - 10:00 Optical Studies of Organic-Inorganic Hybrids made of Crystalline Pentacene Layers on ZnO Substrates Ingo Meyenburg, Tobias Breuer Gregor Witte, and *Wolfram Heimbrodt Philipps-University Marburg, Germany

We-A5 10:00 - 10:15 Electron Paramagnetic Resonance Investigations of Defects in Electron Irradiated ZnO

We-B3 11:45 - 12:00 Optical Characteristics of Type-II Band Alignment Heterostructures: the Case of ZnTe / CdSe

*Jan Eric Stehr(*1), Shula Chen(*1), Knut Knutsen(*2), Bengt Svensson(*2), Weimin Chen(*1), and Irina Buyanova(*1) (*1)Department of Physics, Chemistry and Biology, Linkoping University, Sweden and (*2)Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Norway

*Lionel

We-A6 10:15 - 10:30 Synthesis of ZnO/MgZnO Multilayer Films by Sol-Gel Dip Method *Takashi Yasuda, Takao Sakurai, and Akihiro Kikawada Dept. of Information Technology and Electronics, Ishinomaki Senshu University, Japan

G´erard(*1), Jan-Peter Richters(*2), Edith Bellet-Amalric(*2), Jo¨el Bleuse(*2), Daniel Mourad(*3), Henri Mariette(*1), and R´egis Andr´e(*1) (*1)CEA-CNRS group ”Nanophysique et Semiconducteurs”, Institut NEEL-CNRS, France, (*2)CEA-CNRS group ”Nanophysique et Semiconducteurs”, INAC, CEA-Grenoble, France, and (*3)Institute for Theoretical Physics, University of Bremen, Germany

We-B4 12:00 - 12:15 MBE Growth and Magnetic Properties of Diluted Magnetic Semiconductor (Zn,Fe)Te

Chair : A.Ohtomo, Tokyo Tech.

*Satoshi Ishitsuka(*1), Takeru Domon(*1), Ryota Akiyama(*1), Ken Kanazawa(*1), Shinji Kuroda(*1), Masanori Mitome(*2), Yoshio Bando(*2), and Hironori Ofuchi(*3) (*1)Institute of Materials Science, University of Tsukuba, Japan, (*2)National Institute for Materials Science, Japan, and (*3)Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Japan

We-B1 (invited) 11:00 - 11:30 Growth of Large Diameter ZnTe Single Crystals by the Double Crucible Liquid Encapsulated Pulling Method

We-B5 12:15 - 12:30 Characterization of CdMnTe Crystal Grown with Vertical Bridgman Method under Te-rich Conditions

*Toshiaki Asahi Technology Development Center, JX Nippon Mining & Metals Corporation, Japan

*Jijun Zhang, Linjun Wang, Jiahua Min, Jian Huang, Xiaoyan Liang, Ke Tang, Ping Shen, Min Shen, Lin Wang, and Yiben Xia school of materials science and engineering, Shanghai University, China

We-B

Sept. 11

Growth and Characterization II 11:00 - 12:30

We-B2 11:30 - 11:45 MBE Growth and Characterization of ZnTe Epilayers on m-Plane Sapphire Substrates *Taizo Nakasu(*1), Weiche Sun(*1), Sotaro Yamashita(*1), Takayuki Aiba(*1), Kosoke Taguri(*1), Masakazu Kobayashi(*1,*2), Toshiaki Asahi(*3), and Hiroyoshi Togo(*4) (*1)Waseda Univ. Dep. of Elec. Eng. and Biosci, Japan, (*2)Waseda Univ. Lab. for Mat. Sci. & Tech., Japan, (*3)JX, Japan, and (*4)NTT, Japan

Sept. 11

We-P

Poster Session B 19:00 - 21:00

We-P1 Annealing Effects on Ga-doped ZnO Films Grown by Atmospheric Spray Pyrolysis *Akiko Ide(*1), Kenji Yoshino(*1), Minoru Oshima(*2), Yujin Takemoto(*2), Kouji Toyota(*2), Koichiro Inaba(*2), Ken-Ichi Haga(*2), Toshio Naka(*2), and Kouichi Tokudome(*2) (*1)University of Miyazaki, Japan and (*2)Tosoh Finechem Corporation, Japan

We-P2 The Effect of ZnO Nanorods Grown by Wetbased Process for Light Extraction Structure of LEDs *Rowoon Lee(*1), Semi Oh(*2), Kab Ha(*1), Woong Jang(*1), Seong-Ju Park(*2), and Kyoung-Kook Kim(*1) (*1)Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea and (*2)School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

We-P3 Hetero-epitaxial Growth of Non-polar ZnO Films on Single Crystal NdGaO3 (001) Substrates by MOCVD *Yasuhiro Kashiwaba(*1), Tai Yokoyama(*1), Mio Sakuma(*1), Takami Abe(*2), Akira Nakagawa(*2), Ikuo Niikura(*2), Yasube Kashiwaba(*2), Masahiro Daibo(*2), and Hiroshi Osada(*2) (*1)Sendai National College of Technology, Japan and (*2)Iwate University, Japan

We-P4 Direct Epitaxial Growth of Zinc Blende MgS on GaAs (100) Substrates Akhil Rajan, *Richard T. Moug, and Kevin A. Prior Heriot Watt University, United Kingdom

We-P5 GaAs Reusable Substrates Buffers for II-VI ELO

with

ZnSe

Akhil Rajan, *Richard T. Moug, and Kevin A. Prior Heriot Watt University, United Kingdom

We-P6 Formation of Indium Tin Oxide (ITO) Transparent Electrodes by Magnetron Sputtering for II-VI Compound Semiconductor Optical Devices on InP Substrates *Tomohiro Shiraishi, Ichirou Nomura, Keisuke Murakami, Shingo Takamatsu, Toshiki Kobayashi, and Katsumi Kishino Department of Engineering and Applied Sciences, Sophia University, Japan

We-P7 Fabrication of Ga-In-O films by Molecular Precursor Method and Their Future Application of UV Transparent Electrodes Taihei Yasuno, Hiroki Nagai, Hiroki Hara, Yohei Sugiura, Tomohiro Yamaguchi, Mitsunobu Sato, and *Tohru Honda Graduate School of Engineering, Kogakuin University, Japan

We-P8 Bottom-up Approach to Control the Photon Outcoupling of a II-VI Quantum Dot with a Photonic Wire Thibault Cremel(*1), Myriam Elouneg-Jamroz(*2), Edith Bellet-Amalric(*1), Marceline Bonvalot(*3), Serge Tatarenko(*2), and *Kuntheak Kheng(*1) (*1)CEA-Grenoble/ Institute for Nanoscience and Cryogenics, France, (*2)CNRS/Institut NEEL, France, and (*3)CEA-LETI, France

We-P9 Growth and Characterization Metastable Zinc Blende CrSe *Richard T. Moug and Kevin A. Prior Heriot Watt University, United Kingdom

of

We-P10 Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology *Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo Department of Electrical and Electronic Engineering, Saga University, Japan

We-P11 MOCVD Growth of High Quality ZnO Films on Al2O3 (110) *Yuto Hiragino(*1), Yutaka Furubayashi(*2), Kyota Moriyama(*1), and Yasuhisa Fujita(*1) (*1)Interdisciplinary Graduate School of Science and Engineering, Shimane University, Japan and (*2)Center for Promotion of Project Research, Shimane University, Japan

We-P12 Growth of CuGaTe2 Based Compounds by a Closed Space Sublimation Method *Ayaka Usui(*1), Aya Uruno(*1), and Masakazu Kobayashi(*1,*2) (*1)Department of Electrical Engineering and Bioscience, Waseda University, Japan and (*2)Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Japan

We-P13 Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy *Mitsuhiro Nishio, Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, and Qixin Guo Saga Univesity, Japan

We-P14 PEDOT:PSS/Nonpolar MgZnO Performance for Photovoltaics

Schottky

Sanjay Kumar Mohanta(*1), *Atsushi Nakamura(*1), Adrian Hierro(*2), Gema Tabares(*2), Alvaro Guzman(*2), Elias Munoz(*2), and Jiro Temmyo(*1) (*1)Grad School of Eng. Shizuoka Univ., Japan and (*2)Dpto. Ingenier´ıa Electronica, ISOM, UPM, Spain ´

We-P15 Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application *Shin

Haraguchi(*1), Masaki Miyabara(*1), Tooru Tanaka(*1,*2), Katsuhiko Saito(*1), Qixin Guo(*1), Mitsuhiro Nishio(*1), Kin Man Yu(*3), and Wladek Walukiewicz(*3) (*1)Department of Electrical and Electronic Engineering, Saga University, Japan, (*2)PRESTO, Japan Science and Technology Agency (JST), Japan, and (*3)Materials Sciences Division, Lawrence Berkeley National Laboratory, United States of America

We-P16 Preparation of High Transmittance Ba2ZnS3:Mn Red Phosphor Nanoparticle Layers for Si Solar Cells *Miyoko

Furui(*1) and Masakazu Kobayashi(*1,*2) (*1)Department of Electrical Engineering and Bioscience, Waseda University, Japan and (*2)Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Japan

We-P17 The Light Extraction Structure of GaNbased LEDs Using ZnO Nanotube Grown by Wet Process *Kab Ha(*1), Semi Oh(*2), Woong Jang(*1), Rowoon Lee(*1), Seong-Ju Park(*2), and KyoungKook Kim(*1) (*1)Department of Nano-optical Engineering, Korea Polytechnic University, Republic of Korea and (*2)Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

We-P18 Deposition of Polycrystalline Cd1-xZnxTe Films on ZnTe/Graphite and Graphite Substrates by Close-Spaced Sublimation *Tamotsu Okamoto(*1), Sho Akiba(*1), Kohei Takahashi(*1), Satsuki Nagatsuka(*1), Yohei Kanda(*1), Satoshi Tokuda(*2), Hiroyuki Kishihara(*2), and Toshiyuki Sato(*2) (*1)Kisarazu National College of Technology, Japan and (*2)Shimadzu Corporation, Japan

We-P19 Effect of Surface Morphology on the Field Emission Property for ZnO Films *Zurita Binti Zulkifli(*1,*2), Subramanian Munisamy(*1), and Masaki Tanemura(*1) (*1)Department of Frontier Material, Graduate School of Engineering, Nagoya Institute of Technology, Japan and (*2)Faculty of Electrical Engineering, Universiti Teknologi Mara, Malaysia

We-P20 Effect of Acceptor Co-doping on Magnetism and Electronic States in Ferromagnetic Semiconductor (Zn,Cr)Te *Ke Zhang(*1), Ryota Akiyama(*1), Ken Kanazawa(*1), Shinji Kuroda(*1), and Hironori Ofuchi(*2) (*1)Institute of Materials Science, University of Tsukuba, Japan and (*2)Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Japan

We-P21 Proximity Effect in a d0 Ferromagnet MgO/ Superconductor MgB2 Composite *Takashi Uchino, Yuki Uenaka, Haruka Soma, Kazuyuki Takahashi, Takahiro Sakurai, and Hitoshi Ohta Kobe University, Japan

We-P22 The Coherent Spin Evolution of a Single Mn2+ Ion in a CdTe/ZnTe Quantum Dot *Maciej Koperski(*1), Mateusz Goryca(*1), Piotr Wojnar(*2), Tomasz Kazimierczuk(*1), Tomasz Smolenski(*1), Andrzej Golnik(*1), and Piotr Kossacki(*1) (*1)Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland and (*2)Institute of Physics, Polish Academy of Sciences, Poland

We-P23 Spin-Orbit Interactions in (Cd,Mn)Te Quantum Wells Containing TwoDimensional Electron Gases Caitlin Rice(*1), Simon J Bending(*1), Grzegorz Karczewski(*2), Tomasz Wojtowicz(*2), and *Daniel Wolverson(*1) (*1)Department of Physics, University of Bath, United Kingdom and (*2)Institute of Physics, Polish Academy of Sciences, Poland

We-P24 Energy Relaxation Process in Exciton Transfer between ZnCdMnSe and ZnCdSe Quantum Wells *Takashi Matsumoto, Fumiaki Iwasaki, Shuhei Konaka, Masao Hishikawa, Sakyo Fukasawa, Tsutomu Muranaka, Yoichi Nabetani, Akira Ishikawa, Kazuharu Uchiyama, Kiyoshi Kobayashi, and Hirokazu Hori Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Japan

We-P25 Estimation of Band Gap Energy of MgxZn1-xO Films and MgxZn1-xO:N Films *Takami Abe(*1), Akira Nakagawa(*1), Tetsuya Chiba(*1), Michiko Nakagawa(*1), Shuzo Takahashi(*1), Shigeki Chiba(*1), Yasuhiro Kashiwaba(*2), Tsutomu Ojima(*1), Katsumi Aota(*1), Masahiro Daibo(*1), Ikuo Niikura(*1), Yasube Kashiwaba(*1), and Hiroshi Osada(*1) (*1)Iwate University, Japan and (*2)Sendai National College of Technology, Japan

We-P26 Nonreciprocal Magneto-Optical Effects in CdTe Based Quantum Wells

We-P30 STM/STS Study of Cr Impurity States in (Zn,Cr)Te

*Vladimir Kats(*1,*2), Vladimir Kochereshko(*1,*2), Alexey Platonov(*1,*2), Lucien Besombes(*3), Daniele Wolverson(*4), and Henri Mariette(*3) (*1)A.F.Ioffe Physical-Technical Institute, St. Petersburg, Russia, (*2)Spin Optics Laboratory, St Petersburg State University, St. Petersburg, Russia, (*3)Institut Neel, CNRS, Grenoble, France, and (*4)University of Bath, Bath, United Kingdom

*Taku Nishimura, Ken Kanazawa, Shoji Yoshida, Hidemi Shigekawa, and Shinji Kuroda Graduate School of Pure & Applied Sciences, University of Tsukuba, Japan

We-P27 Correlation Between Photoluminescence and Carrier Concentration in Phosphorusdoped ZnTe *Katsuhiko Saito(*1), Ryosuke Ito(*2), Kento Tanaka(*2), Kensuke Urata(*2), Yasuaki Nakamura(*2), Tooru Tanaka(*2), Qixin Guo(*1), and Mitsuhiro Nishio(*2) (*1)Synchrotron Light Application Center, Saga University, Japan and (*2)Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Japan

We-P28 Recent Discoveries on the E3 Deep Level in ZnO Through High Energy Particle Irradiation and High Temperature Oxygen Annealing *Wilbert Mtangi, Pieter Johan Janse van Rensburg, Francois Danie Auret, Walter Ernst Meyer, Jacquiline Margot Nel, and Mmantsae Diale Department of Physics, University of Pretoria, South Africa

We-P31 Facile Synthesis and Optical Property of Tourmaline/ZnO Composite Thin Film *Yun Guo, Shuang Wen Yu, Ting Yun Xie, Gang Yang, Jun Lin Wang, and Hua Jia Min School of Materials Science and Engineering, Shanghai University, China

We-P32 Applicability of Nitrogen-Doped ZnO Single Crystals for Photoconductive Type UV Sensors *Shuzo Takahashi(*1), Takami Abe(*1), Akira Nakagawa(*1), Tetsuya Chiba(*1), Yasuhiro Kashiwaba(*3), Shigeki Chiba(*1), Haruyuki Endo(*2), Kazuyuki Meguro(*2), Masahiro Daibo(*1), Ikuo Niikura(*1), Yasube Kashiwaba(*1), Shuzo Oshima(*1), and Hiroshi Osada(*1) (*1)Iwate University, Japan, (*2)Iwate Industrial Reseach Institute, Japan, and (*3)Sendai National College of Technology, Japan

We-P33 Electrical Properties of ColumnarStructured p-type MgZnO:Sb Film Grown by Metalorganic Chemical Vapor Deposition *Byeong-Hyeok

We-P29 First-Principles Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors *Masato Ishikawa and Takashi Nakayama Department of Physics, Chiba University, Japan

Kim(*1), Yong-Seok Choi(*2), Jang-Won Kang(*2), and Seong-Ju Park(*1,*2) (*1)Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Republic of Korea and (*2)School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

We-P34 Study of the Coupling of Ultra-Thin CdSe Double Quantum Wells Jose Antonio Lorenzo-Andrade, Frantisek Sutara, ´ ´ and *Isaac Hernandez-Calder on Physics Department, Cinvestav, Mexico

We-P35 Study on the Effect of Film Thickness on the Mechanical and Electrical Performance of CdZnTe films *Kaifeng Qin, Linjun Wang, Haitao Xu, Jian Huang, Jiahua Min, Jijun Zhang, Xiaoyan Liang, Ke Tang, Run Xu, and Yiben Xia school of materials science and engineering, Shanghai University, China

We-P36 Neutronographic Research of ZnSxSe1-x:M (M - 3d Ions) Bulk Crystals: Interplay between Impurity Induced Local Lattice Instabilities and Intrinsic Polymorphism in the Sphalerite Structure of Semiconductor Matrix *Tatiana P. Surkova(*1), Veniamin I. Maksimov(*1), Sergey F. Dubinin(*1), Adan LopezRivera(*2), and Marek Godlewski(*3) (*1)Ural Branch of Russian Academy of Sciense, Institute of Metal Physics, Russia, (*2)Universidad of de los Andes, Venezuela, and (*3)Poland Academy of Sciense, Institute of Physics, Poland

We-P37 Effect of Thermal Activation and Excitation Energy on the Decay Dynamics of the Green Emission in ZnO Crystals. *Kanako Kodama and Takashi Uchino Department of Chemistry, Kobe University, Japan

We-P38 Deep Level Defects in High-resistivity CdZnTe Crystal by Photo-Induced Current Transient Spectroscopy (PICTS) Xiaoyan Liang, *Jiahua Min, Binbin Shi, Sheng Yang, Jijun Zhang, Run Xu, Linjun Wang, Weimin Shi, and Yue Zhao Department of Electronic Information Materials, Shanghai University, China

We-P39 Excitonic Aharonov-Bohm Effect Stacked Type-II II-VI Quantum Dots

in

*Igor L. Kuskovsky(*1) and Maria C. Tamargo(*2) (*1)Department of Physics, Queens College of CUNY, United States of America and (*2)Department of Chemistry, City College of CUNY, United States of America

We-P40 Doping Studies of ZnO Nanowires *Vincent Sallet(*1), Emir Zehani(*1), Corinne Sartel(*1), Said Hassani(*1), Christ`ele Vilar(*1), Alain Lusson(*1), Pierre Galtier(*1), Rodrigue Lard´e(*2), Nooshin Amirifar(*2), Etienne Talbot(*2), Georges Bremond(*3), Bruno Masenelli(*3), Andres de Luna Bugallo(*4), Fabrice Donatini(*4), Julien Pernot(*4), Fabien Bruneval(*5), Guido Petretto(*5), Ivan-Christophe Robin(*6), and Amandine Bocheux(*6) (*1)GEMAC, CNRS-UVSQ, France, (*2)GPM, CNRSINSA de Rouen, France, (*3)INL, CNRS-INSA de Lyon, France, (*4)Institut NEEL, CNRS, France, (*5)CEA-DEN, France, and (*6)CEA-LETI, France

We-P41 Examination of p-contact Layers for BeZnSeTe/MgZnCdSe II-VI Devices on InP Substrates *Shingo Takamatsu, Ichirou Nomura, Toshiki Kobayashi, Keisuke Murakami, Tomohiro Shiraishi, and Katsumi Kishino Sophia University, Japan

We-P42 Highly Mismatched II-VI Compound Alloys for Photovoltaic Applications *Kin Man Yu(*1), Min Ting(*1,*2), Marie A. Mayer(*1,*3), Samuel S. Mao(*2,*4), and Wladyslaw Walukiewicz(*1) (*1)Materials Science Division, Lawrence Berkeley National Laboratory, United States of America, (*2)Department of Mechanical Engineering, University of California, Berkeley, United States of America, (*3) Department of Materials Science and Engineering, University of California, Berkeley, United States of America, and (*4)Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, United States of America

We-P43 Characteristics of ZnO Films Grown by a Newly Developed CVD Method Using HighTemperature H2O Generated from a Catalytic Reaction Naoya Yamaguchi, Tomohiko Takeuchi, Eichi Nagatomi, Souichi Satomoto, Takahiro Kato, and *Kanji Yasui Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, Japan

Th-A

Sept. 12

Excitons & Nanostructures I 8:45 - 10:30 Chair : S.Klembt, Univ. of Bremen

Th-A1 (invited) 8:45 - 9:15 From Excitonic to Photonic Polariton Condensate in a ZnO Microcavity Feng Li(*1), Laurent Orosz(*2), Olfa Kamoun(*3), Sophie Bouchoule(*4), Christelle Brimont(*3), Pierre Disseix(*2), Thierry Guillet(*3), Xavier Lafosse(*4), Mathieu Leroux(*1), Joel Leymarie(*2), Guillaume Malpuech(*2), Meletis Mexis(*3), Martine Mihailovic(*2), Gilles Patriarche(*4), Franc¸ois R´everet(*2), Dmitry Solnyshkov(*2), and *Jesus Zuniga-Perez(*1) (*1)CRHEA-CNRS, France, (*2)Institut Pascal, CNRS and Universite´ Blaise Pascal, France, (*3)Universite´ de Montpellier 2, CNRS, France, and (*4)LPN-CNRS, France

Th-A2 9:15 - 9:30 Observation of Oscillations in Energy of Aharonov-Bohm Excitons in Type-II ZnTe/ZnSe Stacked Submonolayer Quantum Dots. *Bidisha Roy(*1,*2), Haojie Ji(*1,*2), Siddharth Dhomkar(*1,*2), Maria C. Tamargo(*2,*3), and Igor L. Kuskovsky(*1,*2) (*1)Queens College of CUNY, United States of America, (*2)The Graduate Center of CUNY, United States of America, and (*3)The City College of CUNY, United States of America

Th-A3 9:30 - 9:45 Growth and Electro-Optical Characterization of ZnMgTe/ZnTe Waveguide by Molecular Beam Epitaxy *Wei-Che Sun(*1), Taizo Nakasu(*1), Kousuke Taguri(*1), Takayuki Aiba(*1), Sotaro Yamashita(*1), Masakazu Kobayashi(*1,*2), Hiroyoshi Togo(*3), and Toshiaki Asahi(*4) (*1)Department of Electrical Engineering, Waseda University, Japan, (*2)Laboratory of Materials Science & Technology, Waseda University, Japan, (*3)Nippon Telegraph and Telephone Corporation, Japan, and (*4)JX Nippon Oil & Energy, Japan

Th-A4 9:45 - 10:00 Electronic Structure and Exciton-Phonon Interaction in Two- Dimensional Colloidal CdSe Nanosheets *Alexander W. Achtstein(*1), Andrei Schliwa(*2), Anatol Prudnikau(*3), Marya Hardzei(*3), Mikhail V. Artemyev(*3), Christian Thomsen(*2), and Ulrike Woggon(*1) (*1)Institute of Optics and Atomic Physics, Technical University of Berlin, Germany, (*2)Institute of Solid State Physics, Technical University of Berlin, Germany, and (*3)Institute for Physico-Chemical Problems, Belarussian State University, Belarus

Th-A5 10:00 - 10:15 Violet Luminescence Bands in Donor- and Acceptor-Doped ZnO Nanowires Hongfeng Duan, Shiyan Song, Zhizhen Ye, and *Haiping He Zhejiang University, China

Cong Chen,

Th-B

Excitons & Nanostructures II 11:00 - 12:15 Chair : J.Zuniga-Perez, CRHEA-CNRS

Th-B1 11:00 - 11:15 Energy Transfer in Colloidal CdSe/ZnS Quantum Dots for Multiplex Sensing *Uwe Kaiser, Robert Malinowski, Dorleta Jimenez de Aberasturi Arranz, Wolfgang Parak, and Wolfram Heimbrodt Department of Physics and Material Sciences Center, Philipps University, Germany

Th-B2 11:15 - 11:30 Record Operation Temperature (150 K) for Electrically Driven Single Photon Sources Based on Semiconductor Quantum Dots (CdSe/ZnSSe/MgS) ¨ Tilmar Kummell(*1), Wolf Quitsch(*1), Oleh Fedorych(*1), Arne Gust(*2), Carsten Kruse(*2), Detlef Hommel(*2), and *Gerd Bacher(*1) (*1)Werkstoffe der Elektrotechnik and CENIDE, Universit¨ at Duisburg-Essen, Germany and (*2)Institut f¨ ur Festk¨orperphysik, Universit¨ at Bremen, Germany

Th-B3 11:30 - 11:45 Geometry Effects of Nonlinear Optical Properties in 0D-2D II-VI Semiconductor Nanocrystals *Alexander

Th-A6 Different Growth ZnTe/CdTe Nanowires

10:15 - 10:30 Mechanism of

*Pamela Rueda-Fonseca(*1,*2), Edith BelletAmalric(*2), Alberto Artioli(*1), Petr Stepanov(*1), Yann Genuist(*1), Eric Robin(*2), Martien den Hertog(*1), David Ferrand(*1), Kuntheak Kheng(*2), Regis Andre(*1), Joel Cibert(*1), and Serge Tatarenko(*1) (*1)Institut Neel, CNRS and Universite Joseph Fourier, France and (*2)CEA-Grenoble INAC, France

Sept. 12

W. Achtstein(*1), Anatol Prudnikau(*2), Marya Hardzei(*2), Mikhail V. Artemyev(*2), and Ulrike Woggon(*1) (*1)1Institute of Optics and Atomic Physics, Technical University of Berlin, Germany and (*2)2Institute for Physico-Chemical Problems, Belarussian State University, Belarus

Th-B4 11:45 - 12:00 Electroluminescence from Nitrogen Doped ZnO Nanoparticles

Fr-A2 9:15 - 9:30 ZnCdSe/ZnCdMgSe Based Mid-Infrared Quantum Cascade Emitters

*Yasuhisa Fujita(*1), Kyota Moriyama(*1), Yuto Hiragino(*1), Yutaka Furubayashi(*2), Hideki Hashimoto(*2), and Toshiyuki Yoshida(*1) (*1)Interdisciplinary Graduate School of Science and Engineering, Shimane University, Japan and (*2)Center for Promotion of Project Research, Shimane University, Japan

*Arvind Pawan Ravikumar(*1), Joel de-Jesus(*2), Thor Garcia(*3), Maria C. Tamargo(*3), Aidong Shen(*4), and Claire F. Gmachl(*1) (*1)Department of Electrical Engineering, Princeton University, United States of America, (*2)Department of Physics, The City College of New York, United States of America, (*3)Department of Chemistry, The City College of New York, United States of America, and (*4)Department of Electrical Engineering, The City College of New York, United States of America

Th-B5 (late news) 12:00 - 12:15 Heavily n-Doped ZnO as a New Plasmonic Material at Telecommunication Wavelengths Sascha Kalusniak, Sergey Sadofev, and *Fritz Henneberger Humboldt University Berlin, Germany

Fr-A3 9:30 - 9:45 Ultraviolet Electroluminescence Emission from ZnO-based Light Emitting Diode with Multilayer Graphene as a Transparent Hole Injection Layer *Jang-Won Kang(*1), Yong-Seok Choi(*1), Byeong-

Fr-A

Sept. 13

Light-emitting Devices 8:45 - 10:45 Chair : Y.Fujita, Shimane Univ.

Fr-A1 (invited) 8:45 - 9:15 Blue Lasing in the Regime of Weak and Strong Coupling in ZnSe-based High-Q Microcavities *S. Klembt(*1), T. Klein(*1), C. Kruse(*1), D. Hommel(*1), M. Seyfried(*1), J. Gutowski(*1), K. Sebald(*1), E. Durupt(*2), Le Si Dang(*2), and M. Richard(*2) (*1)University of Bremen, Germany and (*2)CNRS/UJF Grenoble, France

Hyeok Kim(*2), Chang Goo Kang(*1), Byoung Hun Lee(*1,*2), C. W. Tu(*3), and Seong-Ju Park(*1,*2) (*1)School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea, (*2)Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Republic of Korea, and (*3)Department of Electrical and Computer Engineering, University of California, San Diego, United States of America

Fr-A4 9:45 - 10:00 Molecular Beam Epitaxy of p-type ZnSTe:N and pn-Junction Light Emitting Diodes *Kunio Ichino, Takahiro Kojima, Shunsuke Obata, Takuma Kuroyanagi, Kenta Kimata, Shoichi Nakazawa, and Shota Kashiyama Department of Information and Electronics, Tottori University, Japan

Fr-A5 10:00 - 10:15 Infrared Distributed Bragg Reflectors Based on II-VI/III-V Heterostructures

Fr-A7 10:30 - 10:45 Compact Green and Yellow-Green IIVI/III-N Laser Diode Converters

*Xinyu Liu(*1), Jin Fan(*2,*3), Xin-Hao Zhao(*2,*4), Lu Ouyang(*2,*3), David J. Smith(*2,*3), Yong-Hang Zhang(*2,*5), and Jacek K. Furdyna(*1) (*1)Department of Physics, University of Notre Dame, United States of America, (*2)Center for Photonics Innovation, Arizona State University, United States of America, (*3)Department of Physics, Arizona State University, United States of America, (*4)Department of Materials Science and Engineering, Arizona State University, United States of America, and (*5)Department of Electrical Engineering, Arizona State University, United States of America

*S. V. Ivanov(*1), S. V. Sorokin(*1), S. V. Gronin(*1), I. V. Sedova(*1), P. S. Kopev(*1), E. V. Lutsenko(*2), A. G. Vainilovich(*2), N. V. Rzheutskii(*2), G. P. Yablonski(*2), and A. Alyamani(*3) (*1)Ioffe Physical-Technical Institute of RAS, Russia, (*2)Stepanov Institute of Physics of NASB, Belarus, and (*3)National Nanotechnology Center, KACST, Saudi Arabia

Fr-A6 10:15 - 10:30 Electron-Beam Pumped VCSEL in the Green and Blue Spectral Region Including an Epitaxial DBR with Output Power in the 3 Watt Range *Thorsten Klein(*1), Sebastian Klembt(*1), Vladimir I. Kozlovsky(*2), Michael D. Tiberi(*3), and Carsten Kruse(*1) (*1)Institute of Solid State Physics, University of Bremen, Germany, (*2)P. N. Lebedev Physical Institute, Russia, and (*3)Principia Lightworks, Inc., United States of America

Sept. 13

Closing 10:45 - 11:15