Introduction To The Issue On Optoelectronic Materials ... - IEEE Xplore

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job more complicated. WON T. TSANG, Guest Editor. Bell Laboratories. Lucent Technologies. Murray Hill, NJ 07974 USA. JAMES J. COLEMAN, Guest Editor.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 3, NO. 3, JUNE 1997

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Introduction to the Issue on Optoelectronic Materials and Processing

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HE APPLICATIONS of optoelectronic devices, including laser printers, compact disk players, CD-ROM’s, and fiber optic telecommunications, are so wide-ranging that it is difficult for any of us to become very far removed from the effects of these devices on our daily lives. The commercial impact of this technology is enormous, with the diode laser market alone projected to reach $1.9 billion in sales in 1997.1 The complex form and function of these remarkable photonic devices arises from an incredible investment of time, money, and intellectual effort in the development of the novel materials and sophisticated processing essential for their construction. In this issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS on Optoelectronic Materials and Processing, we take a focused view of the enabling technologies that are likely to be critical to the next generation of optoelectronic devices. The basis for optoelectronic devices is the photonic materials used to construct these devices. This issue has several invited and contributed papers on new materials and structures including the column III nitrides, which are important for blue and UV lasers and light-emitting diodes. Recent work on nitrides for telecommunications wavelengths is presented and research on antimonides for still longer wavelengths ( 2 m) is described. An alternative growth method for aluminum-free compounds is outlined and strain relaxation effects in InGaAs discussed. Nonsemiconductor materials are important for some integrated systems so several papers on the photonic aspects of other materials are included. Materials engineering, in the form of reduced dimensionality structures such as photonic crystals, microdisks, and quantum dots, is the subject of three papers. The boundary between materials growth and device processing is becoming increasingly blurred as the use of in situ monitoring of an epitaxial growth process evolves, first into control of the growth process, and eventually to in situ patterning, etching, and regrowth. These kinds of processes are described in several papers. Various forms of patterned growth and processing, including selective-area growth, overgrowth, and disordering, are presented. Vertical-cavity structures are certain to play a key role in two-dimensional integrated photonic structures and three papers on these remarkable devices are included.

Photonic integrated circuits, structures that include some combination of the generation, modulation, transmission, and detection of the optical energy on a wafer, are the logical next step in developing more complex photonic systems. The more immediate approach to combining the disparate characteristics of these different functions is to take a hybrid approach, such as wafer bonding which is the subject of several papers in this issue. In the longer term, monolithic integration is more difficult but holds great appeal for manufacturability and several approaches are described in four papers. We hope you will find this issue to be interesting and useful and that it will remain as an important point of reference for this research area. The editors are grateful to those invited and contributing authors for gracefully accepting the pressure we applied for meeting deadlines and also to those reviewers who responded graciously and quickly when we asked for their help. Finally, we would like to especially thank Fran Jetko and Laura Vansavage for doing a superb job in assembling this issue despite the efforts of the guest editors to make their job more complicated.

Publisher Item Identifier S 1077-260X(97)09016-3. 1 S.G. Anderson, “Review and forecast of laser markets: 1997-Part 1,” Laser Focus World, vol. 33, no. 1, pp. 72–92, Jan. 1997.

1077–260X/97$10.00  1997 IEEE

WON T. TSANG, Guest Editor Bell Laboratories Lucent Technologies Murray Hill, NJ 07974 USA JAMES J. COLEMAN, Guest Editor Microelectronics Lab University of Illinois Urbana, IL 61801 USA P. DANIEL DAPKUS, Guest Editor Department of Electrical Engineering and Electrophysics University of Southern California Los Angeles, CA 90089-0483 USA LARRY A. COLDREN, Guest Editor Department of Electrical and Computer Engineering University of California, Santa Barbara Santa Barbara, CA 93106 USA

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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 3, NO. 3, JUNE 1997

Won T. Tsang (M’84–SM’89–F’90) received the Ph.D. degree in electrical engineering from the University of California, Berkeley, in 1976. He joined AT&T Bell Laboratories, Murray Hill, NJ, in 1976. He is an AT&T Bell Laboratories Fellow and Head of the Semiconductor Photonics Research Department. He carried out research in molecular-beam epitaxy, chemical beam epitaxy, semiconductor quantum-well lasers, and other optoelectronic devices. He is the editor of five books on Lightwave Communications Technology, volumes 22A-22E of Semiconductors and Semimetals, and coeditor of several volumes on chemical beam epitaxy and related techniques. Dr. Tsang is the recipient of several awards: the IEEE David Sarnoff Award, the IEEE LEOS Engineering Acheivement Award (shared with Mr. H. Tanaka), the AT&T Bell Laboratories Fellow Award, the Young Scientist Award of the International Symposium on GaAs and Related Compounds, the Adolph Lomb Medal of the Optical Society of America, and sharing the 1996 Achievement Award from IEICE, Japan, with Dr. N. Chinone and Dr. I. Mito. He is a fellow of the American Physical Society, the Optical Society of America, and the American Association for the Advancement of Science.

James J. Coleman (S’73–M’76–SM’80–F’92) received the B.S., M.S., and Ph.D. degrees in electrical engineering in 1972, 1973, and 1975, respectively, from the University of Illinois, Urbana. At Bell Laboratories, Murray Hill, NJ (1976–1978), he studied the materials properties of InGaAsP grown by liquid phase epitaxy (LPE) and helped develop proton-isolated roomtemperature (RT) continuous-wave (CW) lasers operating at wavelengths near 1.3 m. At Rockwell International, Anaheim, CA (1978–1982), he contributed to the development of MOCVD-grown CW RT low-threshold AlGaAs–GaAs laser devices. Since 1982, he has been a Professor with the Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana. He and his students are involved in the study of the materials growth and processing of various structures such as quantum-well heterostructures, superlattices, strained layer InGaAs–GaAs lasers, laser arrays, and integrated photonic devices by selective-area epitaxy. He is an Associate Editor of IEEE PHOTONICS TECHNOLOGY LETTERS and has served as Guest Editor for two Special Issues of the IEEE JOURNAL OF QUANTUM ELECTRONICS. Dr. Coleman is a LEOS Distinguished Lecturer for 1997–1998. He is a Fellow of the Optical Society of America, and the American Association for the Advancement of Science.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 3, NO. 3, JUNE 1997

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P. Daniel Dapkus (SM’80–F’87) was born on January 26, 1944, in Chicago, IL. He received the B.S., M.S., and Ph.D. degrees at the University of Illinois in Urbana in 1966, 1968, and 1970, respectively. He was employed at Bell Laboratories, Murray Hill, NJ, as a Member of Technical Staff from 1970 to 1976 and as Group Leader and then Manager of Optical Sources and Detectors at Rockwell International from 1976 to 1982, before coming to the University of Southern California, Los Angeles, in 1982, as a Professor in Electrical Engineering and Materials Science. He is currently the W. M. Keck Professor of Engineering at USC. He also serves as the Director of the Center for Photonic Technology. He has been actively involved in the development of metalorganic chemical vapor deposition (MOCVD) as a key photonic technology for more than 20 years. He has employed MOCVD in the demonstration of many high performance devices including lasers, detectors, modulators, and transistors. He was involved in the demonstrations of the first practical quantum-well injection lasers during this time. Recently, he has been focusing on the science and technology of laser elements for arrays and optoelectronic integrated circuits. Dr. Dapkus was awarded the IEEE LEOS Engineering Achievement Award and the USC Lockheed Senior Research Award for his technical contributions. He was also an IEEE LEOS Dintinguished Lecturer.

Larry A. Coldren (S’67–M’72–SM’77–F’82) received the Ph.D. degree in electrical engineering from Stanford University, Stanford, CA, in 1972. After 13 years in the research area at Bell Laboratories, he was appointed Professor of Electrical and Computer Engineering (ECE) at the University of California at Santa Barbara (UCSB) in 1984. In 1986, he assumed a joint appointment with Materials and ECE. At UCSB, his efforts have included work on novel guided-wave and vertical-cavity modulators and lasers as well as the underlying materials growth and dry-etching technology. He is now investigating the integration of various high-speed optoelectronic devices, including optical modulators, tunable lasers, and surface-emitting lasers. He is also heavily involved in new materials growth and fabrication technology essential to the fabrication of such integrated optoelectronic components. His group has made many seminal contributions in these areas, including recent contributions in ultrawide-tuning-range lasers with good spurious mode compression, verticalcavity lasers with high efficiency, high power, and temperature insensitivity, and UHV in situ etching and regrowth. He has authored or coauthored over 300 papers, three book chapters and one textbook, and has been issued 26 patents. He is currently Director of the multicampus ARPA-supported Optoelectronics Technology Center. Dr. Coldren is a fellow of the Optical Society of America, a past Vice-President of IEEE Lasers and Electro-Optics Society, and has been active in technical meetings.