Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy. CNR-IMM, sezione di Catania, VIII Strada, 95121, Catania, Italy.
Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications Andrea Severino M.Mauceri, R.Anzalone, A.Canino, N.Piluso, C. Locke, F.La Via, S.E. Saddow Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy CNR-IMM, sezione di Catania, VIII Strada, 95121, Catania, Italy University of South Florida, EE Dept., 4202 E. Fowler Ave., 33625, Tampa, FL, USA
Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications MRS Spring Meeting 2012, Symposium H, April 10-11, 2012
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Outline • Motivations for Silicon Carbide • Material Properties and Benefit of Large Area • 3C-SiC Applications: Power Devices, Solar Cells, MEMS
• CVD growth of 3C-SiC on Si substrates • 3C-SiC Crystal Quality and Defect Density • Process Parameters • Stress Evolution and Mechanical Properties
• Processing of 3C-SiC • Implantation of Al+ ions • Oxidation of 3C-SiC surfaces • Micromachining of 3C-SiC films
• Summary Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications MRS Spring Meeting 2012, Symposium H, April 10-11, 2012
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Motivations for SiC Electronic and Mechanical Properties
Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications MRS Spring Meeting 2012, Symposium H, April 10-11, 2012
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Large area and low cost
4H-SiC Cost 1200 $ 26,5 $/cm2
Cost 1600 $ 19,9 $/cm2
3 inches
4 inches Cost 500 $ 1,55 $/cm2
Cost 500 $ 2,76 $/cm2
6 inches
3C-SiC
8 inches
Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications MRS Spring Meeting 2012, Symposium H, April 10-11, 2012
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Application Fields – Power devices
SiC Source YOLE DEVELOPPEMENT 2009
