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Eleanor Caitlin Shaw, Phillip G Hamer, Katherine Collett, Gabrielle. Bourret-Sicotte .... 47. Quartz modification by Zn ion implantation and swift Xe ion · irradiation.
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Manuscript Title (link)

Authors; Date of online publication; DOI

Ruy S. Bonilla, Bram Hoex, Phillip Hamer and Peter R. Wilshaw; Record online: 12 JUN 2017 | DOI: 10.1002/pssa.201700293 Brett Hallam, Daniel Chen, Moonyong Kim, Bruno Stefani, Bram Hoex, The role of hydrogenation and gettering in enhancing the efficiency Malcolm Abbott and Stuart Wenham; Record online: 6 JUN 2017 | DOI: of next-generation Si solar cells: An industrial perspective 10.1002/pssa.201700305 Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama, Satoshi Proximity gettering technology for advanced CMOS image sensors Shigemastu, Ryo Hirose, Ayumi Onaka-Masada, Yoshihiro Koga and Hidehiko Okuda; Record online: 26 MAY 2017 | DOI: using carbon cluster ion-implantation technique: A review 10.1002/pssa.201700216 Gaute Stokkan, Marisa Di Sabatino, Rune Søndenå, Mari Juel, Antoine Autruffe, Krzysztof Adamczyk, Hanna Vaksvik Skarstad, Kai Erik Ekstrøm, Impurity control in high performance multicrystalline silicon Marie Syre Wiig, Chuan You Chang, Halvard Haug, and Mohammed M'Hamdi; Not yet online. Dielectric surface passivation for silicon solar cells: A review

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Theory of a carbon-oxygen-hydrogen recombination center in ntype Si

Paulo Santos, José Coutinho, Sven Öberg, Michelle Vaqueiro-Contreras, Vladimir P. Markevich, Matthew P. Halsall and Anthony R. Peaker; Version of Record online: 19 JUN 2017 | DOI: 10.1002/pssa.201700309

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Shielded Hydrogen Passivation - a potential in-line passivation process

Gabrielle Bourret-Sicotte, Phillip G Hamer, Ruy S Bonilla, Katherine Collett, Alison Ciesla, Jack Colwell, and Peter R Wilshaw; Not yet online.

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Modelling plasma-induced hydrogen profiles in boron-doped and near-intrinsic silicon

Vladimir V. Voronkov and Robert Falster; Record online: 1 JUN 2017 | DOI: 10.1002/pssa.201700211

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Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment

Ronald Stübner, Vladimir Kolkovsky, Jörg Weber and Nikolay V. Abrosimov; Record online: 16 JUN 2017 | DOI: 10.1002/pssa.201700329

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Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

Stanislau B. Lastovskii, Vasilii E. Gusakov, Vladimir P. Markevich, Anthony R. Peaker, Hanna S. Yakushevich, Fedor P. Korshunov and Leonid I. Murin; Record online: 29 MAY 2017 | DOI: 10.1002/pssa.201700262

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Lyudmila I. Khirunenko, Mikhail G. Sosnin, Andrei V. Duvanskii, Nikolai V. Electronic absorption of interstitial boron-related defects in silicon Abrosimov and Helge Riemann; Record online: 26 MAY 2017 | DOI: 10.1002/pssa.201700245

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Deep carrier traps in as grown isotopically pure 28Si FZ crystal

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Thermoelectric performance in n-type bulk silicon: The influence of Nick S. Bennett; Record online: 9 JUN 2017 | DOI: 10.1002/pssa.201700307 dopant concentration and dopant species

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Heat flow across an oxide layer in Si

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Teimuraz Mchedlidze, Jörg Weber, Nikolay V. Abrosimov and Helge Riemann; Record online: 26 MAY 2017 | DOI: 10.1002/pssa.201700238

Christopher M. Stanley and Stefan K. Estreicher; Record online: 26 MAY 2017 | DOI: 10.1002/pssa.201700204 Microscopic electronic and structural analysis of femtosecond laser Julian Sickel, Arne Ahrens, Anna Lena Baumann, Wolfgang Schade, sulfur hyperdoped silicon Stefan Kontermann, and Michael Seibt; Not yet online. Yuri A. Astrov, Valentina B. Shuman, Leonid М. Portsel, Аnatoly N. Lodygin, Sergey G. Pavlov, Nikolay V. Abrosimov, Valery N. Shastin and Diffusion doping of silicon with magnesium Heinz-Wilhelm Hübers; Record online: 29 MAY 2017 | DOI: 10.1002/pssa.201700192

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Recombination via transition metals in solar silicon: The J. Mullins, S. Leonard, V. P. Markevich, I. D. Hawkins, P. Santos, J. significance of hydrogen–metal reactions and lattice sites of metal Coutinho, A. G. Marinopoulos, J. D. Murphy, M. P. Halsall and A. R. Peaker; Record online: 12 JUN 2017 | DOI: 10.1002/pssa.201700304 atoms

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Light-induced degradation in quasi-monocrystalline silicon PERC solar cells: Indications on involvement of copper

Henri Vahlman, Matthias Wagner, Franziska Wolny, Andreas Krause, Hannu Laine, Alessandro Inglese, Marko Yli-Koski and Hele Savin; Record online: 7 JUN 2017 | DOI: 10.1002/pssa.201700321

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Saw damage gettering for industrially relevant mc-Si feed-stock

Eleanor Caitlin Shaw, Phillip G Hamer, Katherine Collett, Gabrielle Bourret-Sicotte, Ruy S Bonilla, and Peter R Wilshaw; Not yet online.

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Geometry-induced quantum effects in periodic nanostructures

A. Tavkhelidze, L. Jangidze, M. Mebonia, K. Piotrowski, J. Więckowski, Z. Taliashvili, G. Skhiladze and L. Nadaraia; Record online: 16 JUN 2017 | DOI: 10.1002/pssa.201700334

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Dmitriy Marinskiy, Patrick Polakowski, Piotr Edelman, Marshall Wilson, Ferroelectric HfO2 thin film testing and whole wafer mapping with Jacek Lagowski, Joachim Metzger, Robert Binder and Johannes Müller; non-contact corona-Kelvin metrology Record online: 1 JUN 2017 | DOI: 10.1002/pssa.201700249

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Experimental evidence of electron capture and emission from trap Friedemann D. Heinz, Tim Niewelt and Martin C. Schubert; Record online: 1 JUN 2017 | DOI: 10.1002/pssa.201700292 levels in Cz silicon

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The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

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Photoluminescence associated with {113} defects in oxygenimplanted silicon

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Interface traps in 28 nm node field effect transistors detected by capacitance transient spectroscopy

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About the influence of deposited nitride layers on oxide precipitation after RTA pre-treatment

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N. A. Sobolev, A. E. Kalyadin, E. I. Shek, K. F. Shtel‘makh, V. I. Vdovin, A. K. Gutakovskii and L. I. Fedina; Record online: 7 JUN 2017 | DOI: 10.1002/pssa.201700317 Anna Johnsson, Peter Pichler and Gerhard Schmidt; Record online: 7 JUN 2017 | DOI: 10.1002/pssa.201700207

Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling Density functional theory calculations of helium clustering in monoLaurent Pizzagalli, Marie-Laure David, and Julien Dérès , di-, and hexa-vacancy in silicon

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Vasilii E. Gusakov, Stanislau B. Lastovskii, Leonid I. Murin, Ekaterina A. Tolkacheva, Lyudmila I. Khirunenko, Mikhail G. Sosnin, Andrei V. Duvanskii, Vladimir P. Markevich, Matthew P. Halsall, Anthony R. Peaker, Ilia Kolevatov, Hussein M. Ayedh, Edouard V. Monakhov and Bengt G. Svensson; Record online: 29 MAY 2017 | DOI: 10.1002/pssa.201700261

Teimuraz Mchedlidze, Maximilian Drescher, Elke Erben and Jörg Weber; Record online: 23 MAY 2017 | DOI: 10.1002/pssa.201700182

Gudrun Kissinger, Dawid Kot, Jaroslaw Dabrowski, Thomas Grabolla, Timo Müller and Andreas Sattler; Record online: 26 MAY 2017 | DOI: 10.1002/pssa.201700236 Influence of rapid thermal processing on carrier concentration in Luciana Capello, Isabelle Bertrand and Oleg Kononchuk; Record online: 12 JUN 2017 | DOI: 10.1002/pssa.201700275 high resistivity silicon Ekaterina V. Astrova, Nikita E. Preobrazhenskiy, Sergey I. Pavlov and Morphology of macroporous silicon subjected to sintering in argon Vladimir B. Voronkov; Record online: 1 JUN 2017 | DOI: 10.1002/pssa.201700211 Characterization of light-activated Cu defects in silicon: Comparison Alessandro Inglese, Henri Vahlman, Wolfram Kwapil, Jonas Schön and Hele Savin; Record online: 25 APR 2017 | DOI: 10.1002/pssc.201700103 with the recombination activity of metallic precipitates

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Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures Nickel in silicon: Room-temperature in-diffusion and interaction with radiation defects

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Luminescent and electrical properties of oxygen-implanted silicon

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Dislocation trails in Si: Geometry and electrical properties

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Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons Study on defect annealing potential and bulk micro defect formation using high temperature RTA conditions for Cz- grown Silicon

Nikolai Yarykin and Jörg Weber; Record online: 24 MAY 2017 | DOI: 10.1002/pssc.201600267 Nikolai Yarykin and Jörg Weber; Record online: 18 MAY 2017 | DOI: 10.1002/pssc.201700005 Denis Danilov, Oleg Vyvenko, Anton Loshachenko, Boris Ber, Dmitrii Kasantsev and Nikolay Sobolev; Record online: 13 JUN 2017 | DOI: 10.1002/pssc.201700114 V. I. Orlov, E. B. Yakimov and N. Yarykin; Record online: 11 MAY 2017 | DOI: 10.1002/pssc.201700074 Nikolay Arutyunov, Vadim Emtsev, Mohamed Elsayed, Reinhard KrauseRehberg, Nikolay Abrosimov, Gagik Oganesyan, and Vitalii Kozlovski; Not yet online. Timo Mueller, Michael Gehmlich, Gudrun Kissinger, Dawid Kot, Andreas Sattler, Alfred Miller, and Erich Daub; Not yet online.

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Trapping and diffusion behaviour of hydrogen simulated with TCAD Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose, Ayumi Masada, Takeshi Kadono, Yoshihiro Koga, Hidehiko Okuda and Kazunari Kurita; in projection range of carbon-cluster implanted silicon epitaxial Record online: 5 APR 2017 | DOI: 10.1002/pssc.201700036 wafers for CMOS image sensors

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Optical and electronic properties of periodic Si nanostructures

A. Tavkhelidze, A. Bayramov, Y. Aliyeva, L. Jangidze, G. Skhiladze, S. Asadullayeva, O. Alekperov and N. Mamedov; Record online: 30 MAY 2017 | DOI: 10.1002/pssc.201700093

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Impact of damages in monocrystalline n-Si on material photosensitivity

Marina Tigishvili, Nina Khuchua, Nodar Gapishvili, Tatiana Sakharova, Nugzar Dolidze, Zurab Jibuti, Giorgi Peradze and Revaz Melkadze; Record online: 23 MAY 2017 | DOI: 10.1002/pssc.201700094

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Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge-based structures on Si substrate X-ray characterization of self-organized periodic body-centered tetragonal lattices of SiGe dots

Bernhard Schwartz, Manfred Reiche and Martin Kittler; Record online: 9 MAY 2017 | DOI: 10.1002/pssc.201700018 Peter Zaumseil, Yuji Yamamoto and Giovanni Capellini; Record online: 31 MAY 2017 | DOI: 10.1002/pssc.201700004

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Influence of irradiation on mechanical properties of Si-Ge alloys

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High amplitude internal friction in monocrystalline germaniumdoped silicon

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Thermal stability of DRL in n-GaN

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Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates

Avtandil Sichinava, Guram Bokuchava, Giorgi Chubinidze, Nodar Gapishvili and Giorgi Archuadze; Version of Record online: 23 MAY 2017 | DOI: 10.1002/pssc.201700123 Ia Kurashvili, Giorgi Darsavelidze and Guram Bokuchava; Record online: 22 MAY 2017 | DOI: 10.1002/pssc.201700107 Oleg Medvedev, Oleg Vyvenko and Anton Bondarenko; Record online: 23 MAY 2017 | DOI: 10.1002/pssc.201700111 Takashi Sekiguchi, Woong Lee, Xianjia Luo, Takashi Kimura, and Yujin Cho; Not yet online.

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Two-Stage Mechanism of Zn Nanoparticles Formation in ZnO Crystal by Nd:YAG Laser Radiation

Arturs Medvids, Liga Grase, Pavels Onufrijevs, Hidenori Mimura, Volodymyr Yukhymchuk, and Gundars Mezinskis; Not yet online.

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Quartz modification by Zn ion implantation and swift Xe ion irradiation

Vladimir Privezentsev, Vaclav Kulikauskas, Alexander Didyk, Vladimir Skuratov, Edward Steinman, Alexey Tereshchenko, Nikolay Kolesnikov, Alexey Trifonov, Oleg Sakharov and Sergey Ksenich; Record online: 6 JUN 2017 | DOI: 10.1002/pssc.201700112

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Electron beam induced excess carrier concentration

E. B. Yakimov; Record online: 27 APR 2017 | DOI: 10.1002/pssc.201600266

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A photo-elastic microscopy study of the temperature de-pendency Martin Herms, Matthias Wagner, Ingrid De Wolf, and Joke De of stress induced by through silicon vias in silicon Messemaeker; Not yet online.

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Development of fountain detectors for spectroscopy of secondary Toshihide Agemura, Hideo Iwai and Takashi Sekiguchi; Record online: 11 APR 2017 | DOI: 10.1002/pssc.201700057 electron in SEM N. Mamedov, A. Tavkhelidze, A. Bayramov, K. Akhmedova, Y. Aliyeva, G. Spectroscopic planar diffraction ellipsometry of Si-based multilayer Eyyubov, L. Jangidze and G. Skhiladze; Record online: 23 MAY 2017 | structure with subwavelength grating DOI: 10.1002/pssc.201700092

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Cathodoluminescnece study of pn-junctions in widegap materials using cross sectional polishing

Kenichi Yoshimura, Yujin Cho, Xianjia Luo, Takashi Kimura and Takashi Sekiguchi; Record online: 8 MAY 2017 | DOI: 10.1002/pssc.201700096

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The beginning of wine and viticulture

Stefan K. Estreicher; Record online: 10 APR 2017 | DOI: 10.1002/pssc.201700008