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PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON
QUANTUM CONFINEMENT: NANOSTRUCTURES Editors M. Cahay Dept. of Electrical and Computer Engineering and Computer Science University of Cincinnati Cincinnati, Ohio D. J. Lockwood Institute for Microstructural Sciences National Research Council Ottawa, Canada J. P. Leburton Beckman Institute Urbana, Illinois S. Bandyopadhyay Dept. of Electrical Engineering University of Nebraska Lincoln, Nebraska DIELECTRIC SCIENCE AND TECHNOLOGY, ELECTRONICS, AND LUMINESCENCE AND DISPLAY MATERIALS DIVISIONS
Proceedings Volume 98-19
THE ELECTROCHEMICAL SOCIETY, INC., 10 South Main St., Pennington, NJ 08534-2896, USA
DTIC QUALITY HfSPECTBD 4
Copyright 1999 by The Electrochemical Society, Inc. All rights reserved. This book has been registered with Copyright Clearance Center, Inc. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society, Inc. 10 South Main Street Pennington, New Jersey 08534-2896, USA Telephone (609) 737-1902 Fax (609) 737-2743 e-mail:
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PREFACE
This book is a collection of the some of the papers presented at the Fifth International Symposium on Quantum Confinement: Nanostructures, held November 2-5 in Boston, USA, as part of the 194th Meeting of the Electrochemical Society. This symposium was a follow-up of previous meetings held in St Louis (Spring '92), San Francisco (Spring '94), Chicago (Fall '95), and Montreal (Spring '97). Forthcoming meetings will be held in Honolulu (Fall '99) and in Washington (Fall '01). The symposium was sponsored by the Dielectric Science and Technology, the Electronics, and the Luminescence and Display Materials Divisions of the Electrochemical Society. There was a one day session organized jointly with the EXCON' 98 (Excitonic Processes in Condensed Matter) meeting. The symposium was organized to address recent developments in the area of nanoscale semiconducting and metallic structures with emphasis on ultrasmall clusters and their potential for device applications. Papers were presented on silicon nanostructures, porous silicon, quantum dot structures, excitons in nanostructures, self-ordered nanostructures and clusters, quantum devices, architectures, and circuits. This Proceedings Volume includes 55 of the 68 papers presented at the meeting. The symposium was organized into oral presentations that spanned four days including one day organized jointly with the EXCON' 98 (Excitonic Processes in Condensed Matter) meeting. Posters were also presented during an evening session. Invited papers are indicated by an asterisk in the Table of Contents. The editors thank all the speakers and session chairpersons for their contributions to the success of the symposium. We also thank the Electrochemical Society staff for their constant support and for their help in preparing the volume for publication. Finally, we would like to conclude by expressing our appreciation for the financial support provided by the U.S. Army Research Office and the Electrochemical Society.
M. Cahay D. J. Lockwood J. P. Leburton S. Bandyopadhyay
TABLE OF CONTENTS
PREFACE
iii Silicon Nanostructures
A Review on Epitaxial Si/Oxygen Superlattice as: Si Light Emitter and Insulating Barrier 3 R. Tsu* Measurement of Photocarrier Lifetimes in Silicon Nanoclusters 17 A. Kenyon, S. Botti, P. F. Trwoga, and C. W. Pitt Characterization of RTCVD Grown Si Films on S1O2 for Nanotechnology Applications 27 J. Vizoso, F. Martin, X. Martinez, M. Garriga, and X. Aymerich Effects of Thermal Processing on Photoluminescence of Si Nanocrystallites Prepared by Pulsed Laser Ablation 40 /. Umezu, K. Shibata, S. Yamaguchi, H. Sato, A. Sugimura, Y. Yamada, and T. Yoshida Observation of an Electron Charging Effect in Si Nanocrystals Embedded in an Ultrathin Gate Oxide 49 T. Maeda, E. Suzuki, I. Sakata, M. Yamanaka, and K. Ishii Formation and Characterization of Erbium Doped Silicon Nanocrystals .. 61 J. St. John, J. L. Coffer, Y. Chen, and R. F. Pinizzotto Structural and Electrical Characterization of Nanocrystalline Silicon Superlattices 76 L.Tsybeskov", G. F. Grom, P. M. Fauchet, J. P. McCaffrey, J.-M. Baribeau, H. J. Labbe, G. I. Sproule, and D. J. Lockwood Ordering and Crystallization in Ultra Thin SijSi02 Superlattices 94 M. Zacharias, J. Blaäsing, P. Veit, L. Tsybeskov, K. D. Hirschman, and P. M. Fauchet Optical Properties of Silicon Nanocrystals Formed by Ion Implantation .. 106 M. H. Wu, A. Veda, R. Mu, D. 0. Henderson, R. Zuhr, A. Meldrum, and C. W. White Nonlinear Optical Phenomena in the Luminescence from Si Nanocrystals 118 D. Kovalev, H. Heckler, B. Averboukh, M. Ben-Chorin, andF. Koch Magnetospectroscopy of Si Nanocrystals 128 H. Heckler, D. Kovalev, G. Polisski, N. N. Zinov'ev, and F. Koch
Porous Silicon Light Emitting Micropatterns of Porous Semiconductors Created at Surface Defects 141 D.J. Lockwood, P. Schmuki, and L. E. Erickson Quenching of Red Photoluminescence of Porous Silicon with Adsorption of Alcohols 151 M. Shimura, K. Kiyama, and T. Okumura Quantum Size Controlled Percolation Effects on Electron Transport in Nanoparticle Thin Films 163 J. Jacbos, B. Hamilton, D. Teehan, and L. T. Canham
Excitons in Nanostructures Optical Properties of Semiconductor Nanocrystals Embedded in Dielectric Media 177 Al.L.Efros* and M. Rosen Excitonic Optical Nonlinearity and Exciton Dephasing in Quantum Dots 192 T.Takagahara* Optical Properties of Charged InAs Quantum Dots 213 K.Schmidt* , J. Garcia, G. Medeiros-Ribeiro, U. Kunze, and P. M. Petroff Internal Transitions of Neutral and Charged Magneto-excitons in GaAs Nanostructures by Optically Detected Resonance Spectroscopy 227 B.D.McCombe*, H. A. Nickel, G. Kioseoglou, G. S. Herold, T. Yeo, H. D. Cheong, A. Petrou, A. D. Dzyubenko, A. Yu. Sivachenko, and D. Broido Optical Properties of Excitons in Semiconductor Quantum Wires 241 V. Dneprovskii, E. Zhukov, E. Mulyarov, S. Tikhodeev, and Y. Masumoto
Quantum Dot Structures How to Describe the Electronic Structure of Semiconductor Quantum Dots A. Zunger* Spectroscopy of a Few Electron Lateral Dot C. Gould, A.Sachrajda* , P. Hawrylak, P. Zawadzki, Y. Feng, and Z. Wasilewski Stark Spectroscopy Investigation of Spectral Diffusion In Single CdSe Quantum Dots K. Shimizu, S. A. Empedocles, R. Neuhauser, and M. G. Bawendi Carrier Relaxation in InGaAs/GaAs Quantum Dots with Tunable Intersublevel Transitions N. Perret, D. Morris, and R. Leon Engineering of the Ferro-Magnetic and Ferro-Electric Properties of Strained Quantum Dots J.B. Khurgin and F. Jin Optical properties of ZnSe/Cdse-based QD structures A. D. Andreev, R. P. Seisyan, R. M. Datsiev, and S. V. Ivanov Effects of Carrier Relaxation and Emission on Photoluminescence of InAs Quantum Dots H. Zhu, Z. M. Wang, B. Q. Sun, S. L. Feng, D. S. Jiang, and H. Z. Zheng Dynamical And Spectral Peculiarities Of Quantum Dot Lasers Under Different Operation Conditions D. Bhattacharyya, E. A. Avrutin, A. C. Bryce, J. M. Gray, J. H. Marsh, D. Bimberg, F. Heinrichsdorff, V. M. Ustinov, S. V. Zaitsev, N. N. Ledentsov, Z. I. Alferov, A. I. Onishchenko, and E. P. 0' Reilly
259 270
280
286
297 312
318
320
Self-Ordered Nanostructures Size-controllable Nanostructure Array Fabrication with Self-Assembly ... C. Haginoya, M. Ishibashi, and K. Koike Carrier Dynamics in Stacked Self-Assembled InAs/GaAs Quantum Dots . D. Morris and S. Fafard Intraband Excited States and Relaxation Time in InAs/GaAs SelfAssembled Quantum Dots S. Sauvage, P. Boucaud, F. Glotin, R. Prazeres, J.-M. Ortega, A. Lemakre, J.-M. Gerard, and V. Thierry-Mieg Electronic Bistability in An Electrochemically Self-Assembled Array of Semiconductor Quantum Dots S. Bandyopadhyay, N. Kouklin, L. Menon, L. Balandin, D. Zaretsky, A. Varfolomeev, and S. Tereshin
vii
335 348
357
371
Clusters and Other Nanostructures Magneto-optical properties of II-VI semiconductor nanoparticles, either embedded in glass matrix or covered by epitaxial capping E. Lifshitz, H.-E. Porteanu, I. D. Litvin, and A. Glozman, Photoluminescence of Nanocrystalline ZnO Particles A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink Photo-induced Nano-Patterns on the Surface of Cw Single Crystals L. Jiang, Y. Kim, T. Iyoda, J. Lin, K. Kitazawa, A. Fujishima, and K. Hashimoto Photoresponse of Spray-Pyrolytically Synthesized Nanocrystalline n-Fe203 Thin Film Electrodes Towards The Water-Splitting Reaction S.U.M. Khan and J. Akikusa Modification of One Phonon Emission Rates Due to Finite Size Effects in Y203Eu3+ Nanocrystals H.-S. Yang, R. S. Meltzer, W. M. Dennis, S. P. Feofilov, and B. M. Tissue Optical Properties of Au Nanocrystals Confined in Porous Vycor Glass .. R. Mu, A. Veda, M. H. Wu, D. 0. Henderson, K. Mahne, G. Mills, and A. Meldrum Copper Doped CdSe Nanocrystalline Thin Films N. Chandrasekharan, S. Gorer, and G. Hodes Calculation of Structure and Properties of Semiconductor Clusters: Influence of Extended Defects K. Masuda-Jindo, M. Menon, K. R. Subbaswamy, and M. Aoki Computer Simulation Study of The Properties of Strained Layer Superlattices by TBMD and PPM K. Masuda-Jindo and R. Kikuchi Interface Light Absorption in Nanostructures L. Braginsky and V. Shklover
381 392
402
410
430
439
454
464
475 489
Quantum Devices, Architectures, and Circuits Role of Small Dimensions and Quantum Confinement in Small Silicon Memories S.Tiwari*, F. Rana, A. Kumar, J.J. Weiser, and C.T. Balck Electron Waveguide Pumped Quantum Wire Far IR Laser E. Forsberg, J.-O. Wesström, L. Thylen, and T. Palm 3D Computer Modeling of Silicon Quantum-Dot Floating Gate Flash Memory Device A. Thean and J.-P. Leburton Simulation of Nanoscale Silicon Conduction Channels A. Trellakis and U. Ravaioli Magneto-capacitance of Multiprobe Mesoscopic Systems P. Pomorski Adaptive Control of Single-Electron Circuit Signatures for Computation . R. Rendell Fault Rates in Nanochips S. Spagocci and T. Fountain Influence of the Spin-Orbit Split-Off Band on the Tunneling Properties of Holes Across InAlAs/InGaAs and InP/InGaAs Interfaces S. Ekbote, M. Cahay, and K. Roenker Johnson Noise in Quantum Wires: Temperature Dependence and the Effect of High Electric Fields A. Svizhenko, S. Bandyopadhyay, and M. Stroscio Visible Light Emitting Device with Schottky Contact on Ultra-thin Amorphous Silicon Layer Containing Silicon Nanocrystals S. Fujita and N. Sugiyama Quantum Transport Through an Atomic Cluster J. Taylor, H. Guo, anf J. Wang Nonlinear Resonant Tunnelling Through a Double Degenerate Local State and Strong Electron-Phonon Interaction V. N. Ermakov The Domains of Current in the Resonant Tunneling Diodes M. Feiginov and V. A. Volkov Radioactivity - Induced Degradation of Si PIN Photodetectors E. A. Anagnostakis
507 529
542 551 563 574 582
597
618
629 640
650 663 670
* Invited Speaker AUTHÖR INDEX
681
SUBJECT INDEX
687
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xi
Silicon Nanostructures
Electrochemical Society Proceedings Volume 98-19
Electrochemical Society Proceedings Volume 98-19
A Review on Epitaxial Si / Oxygen Superlattice as: Si Light Emitter and Insulating Barrier R.Tsu Department of Electrical and Computer Engineering University of North Carolina at Charlotte Charlotte, NC 28223 USA
ABSTRACT A coherent review of the work in the past several years on epitaxially formed Si/O-superlattice is presented. The Si growth beyond the adsorbed monolayer of oxygen is epitaxial having fairly low defect density consisting of stacking faults and dislocations. At present, such a structure shows electroluminescence and insulating behavior, useful for optoelectronic and SOI applications. Since this type of superlattice consisting of monolayers of adsorbed atoms or molecules sandwiched between thin epitaxially grown silicon (l-2nm), results in very thin barriers, some materials on the fundamental aspects of quantum wells and superlattices, though already in the literatures, are presented here for a better exposition of what one can expect from this type of semiconductor-atomicsuperlattices.
INTRODUCTION Without a suitable heterojunction barrier, silicon has not made a significant contribution to quantum devices. Silicon dioxide with a barrier height of 3.2 eV in the conduction band of silicon is amorphous, preventing the building of a quantum well structure on top of the a-Si02 barrier. Several years ago, it was proposed that the oxides of one or two monolayers might allow the continuation of epitaxy. [1] After several failures in attempting to realize the SLB (Superlattice Barrier) with thin silicon layers separated by thin oxides, a new method, involving the exposure to molecular oxygen followed by epitaxial growth of silicon using the in-situ RHEED (reflection high energy electron diffraction) for monitoring epitaxy, was introduced. The arriving silicon beam has sufficient energy to convert the adsorbed molecular oxygen to bonded Si-O. [2] Silicon growth beyond a barrier structure consisting of 1 or 2nm of silicon sandwiched between adjacent layers of adsorbed oxygen up to 100 Langmuir of exposure for each layer is epitaxial and almost free of stacking faults as
Electrochemical Society Proceedings Volume 98-19
determined in high resolution X-TEM. [3] The effective barrier height measured is almost 0.5eV.[4] It is presented in the section that follows that the best theoretically estimated barrier height between silicon and mono-oxide is 1.5eV. The difficulties involved in the determination of extremely thin barrier leads to lower values. This barrier structure may be repeated for achieving desired carrier insulation. Therefore we now have a method to build an epitaxial SOI. Forming a superlattice by many repeats of the basic period, Si/O, results in a structure that exhibits visible photo-luminescence and eIectro-luminescence.[5,6] It is worth pointing out that our electro-luminescent diode has been life-tested for eight months of continuous operation without any degradation. Thus the SAS is ready for playing an important role in optoelectronics with silicon. This type of superlattice, semiconductor-atomic-superlattice, (SAS), has extremely thin barriers. The unavoidable defects such as strains, dangling bonds, etc. at the interfaces, may degrade the degree of quantum confinement, particularly obvious when amorphous silicon or a-Si:H followed by crystallization is involved [7,8]. These concerns have been treated by using the quantum mechanical Langevin's equation, [9,10] and by introducing a relaxation time. [11,12] Results of these studies, Refs.9-12, indicates that quantum confinement effects may be easier to manifest than the usual rule that the mean free path must be greater than the well width, or k^ £ nn. Some phase of these published works is repeated here to bring out the principles involved, with an emphasis on clarity and physical meanings, rather than mathematical details. The method has been extended to replacing the exposure to molecular oxygen by exposure to carbon mono-oxide. In this case, perhaps the name SAS should be replaced by SMS, semiconductor-molecular-superlattices. Results are just as exciting. Hopefully many other systems should be possible. The fact is that it is rather difficult to wipe out effects of epitaxy short of amorphizing by ion bombardment.[13]
EPITAXY ON Si (100) WITH ADSORBED OXYGEN Silicon depositions are performed in a MBE system generally at relatively low substrate temperature of 550-600°C. The exposure to molecular oxygen is at a lower temperature of
