Sep 1, 1990 - Howard Rast, Dr. Carl Zeisse, Maureen O*Brien, Dr. Don. Mullin, Richard Nguyen, Paul Thibado. Dr. Charlesý. Kewett, and Dr. Alan Gordon.
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Fel)ruarv 199: 4 TITLE AND SUBmTILE
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A THERMALLY ACTiWATED SOLID STATE REACFION PIROCESS FOIR FABRICATING OHMIC CONTACTS TO SEMICONDUC`INNG D)IAMO•ND)
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6 AUTHCR(S)
J. R. Zeidler, K. L. Moazed, and M. J. Taylor 7. PERFORMING ORGANIZATION NAME(S) AND ADORESS(ES)
Naval Command, Control and Ocean Surveillance Center (NCCOSC) RDT&E Division San Diego, CA 92152-5001
North Carolina State U]niversitv Department of Materials Science and Engineering Raleigh, NC 27695-79 16
9 SPONSORING/MONITORING AGENCY NAME(S) AND ADORESS(ES)
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Arlington, VA 22217-5000
11.SUPPLEMENTARY
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Office of Chief of Naval Research Independent Research Programs (IR) OCNR-1loP NOTES
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QAPR1 21993 D
12a DISTRIBUTIONJAVAILABIUTY STATEMENT
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Approved for public release; distribution is unlimited.
13. ABSTRACT (Mademan 200 words)
Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/Au deposited on diamond produced adherent ohmic contacts after annealing at 950 0 LC. A thermally activated solid state reaction which produces a refractory carbide precipitate at the original diamond/ metal interface is the principal factor in affecting the properties of the contacts. The interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x-ray diffraction, metallography, and I-V measurements.
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93-07477
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Published in Journal Applied Physics 68(5), 1 September 1990. 15 NUMBEROF PAGES
14. SUBJECT T'RMS
semiconducting diamond
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1!NCL-ASSIFIED 21a. NAME OF RESPONS'OLL NOWVfOUAý
J. R. Zeidler
NMH7540-01 .2$O-8600
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