Room-temperature ferromagnetism induced by Cu vacancies in Cux(Cu2O)1-x granular films Xie Xin-Jian, Li Hao-Bo, Wang Wei-Chao, Lu Feng, Yu Hong-Yun, Wang Wei-Hua, Cheng Ya-Hui, Zheng Rong-Kun, Liu Hui Citation:Chin. Phys. B . 2015, 24(9): 097504. doi: 10.1088/1674-1056/24/9/097504
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Chin. Phys. B Vol. 24, No. 9 (2015) 097504
Room-temperature ferromagnetism induced by Cu vacancies in Cux (Cu2O)1−x granular films∗ Xie Xin-Jian(解新建)a) , Li Hao-Bo(李好博)b) , Wang Wei-Chao(王卫超)b) , Lu Feng(卢 峰)b) , Yu Hong-Yun(于红云)c) , Wang Wei-Hua(王维华)b)† , Cheng Ya-Hui(程雅慧)b)‡ , Zheng Rong-Kun(郑荣坤)d) , and Liu Hui(刘 晖)b) a) School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China b) Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China c) Center for Testing and Analyzing of Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China d) School of Physics, University of Sydney, NSW 2006, Australia (Received 7 February 2015; revised manuscript received 12 March 2015; published online 20 July 2015)
Cux (Cu2 O)1−x (0.09 6 x 6 1.00) granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux (Cu2 O)1−x deposition. Room-temperature ferromagnetism (FM) is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux (Cu2 O)1−x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2 O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.
Keywords: Cux (Cu2 O)1−x granular films, room-temperature ferromagnetism, oxide diluted magnetic semiconductors PACS: 75.50.Pp, 75.70.Cn, 75.70.–i DOI: 10.1088/1674-1056/24/9/097504
1. Introduction Oxide diluted magnetic semiconductors (ODMS) have attracted great attention due to their potential applications in spintronic devices. [1–3] In the last two decades, roomtemperature ferromagnetism (FM) has been observed in many ODMS systems, such as Mn: ZnO, [4] Co: TiO2 , [5] Co: SnO2 , [6] Cu: ZnO, [7] and etc. Interestingly, some metal oxide semiconductors have exhibited large intrinsic FM, even without intentional doping. Venkatesan et al. have reported roomtemperature FM in undoped HfO2 and ZrO2 films. [8] Similar observations have been shown in low-dimensional structures of TiO2 , In2 O3 , [9] ZnO. [10–14] These findings have stimulated a debate on the physical mechanism of the FM in ODMS. Some believe that O defects are the origin of the FM, [10,15] while others think that the FM is contributed by the cation defects in some systems. [16] Among these discussion on the FM in ODMS, it is worthwhile noting that the p-type related ODMS have drawn less attention than the n-type ODMS, like ZnO. However, the p-type materials are necessary to make p–n junctions. Therefore, the fabrication of p-type ODMS and further unveiling of their microscopic FM origin are significant in the current stage. [17,18] As a natural p-type oxide semiconductor, cuprous ox-
ide (Cu2 O) has been widely investigated in photovoltaic devices, [19] field effect transistors, [20] and photocatalysis. [21] Cu2 O doped with transition metal (TM) atoms has demonstrated room-temperature FM. [22,23] Interestingly, roomtemperature FM has also been obtained in undoped Cu2 O nanoparticles, fine powder, and nanowires. [24–26] Both O defects and Cu defects are the possible origin of the FM in undoped Cu2 O. However, it is rarely understood that which defect is dominant and how to modulate the FM through this defect. In order to provide more experimental evidence on the FM in undoped Cu2 O and to tune the FM with relatively simple fabrication technique, the Cux (Cu2 O)1−x (0.09 6 x 6 1.00) granular films without intentional magnetic dopants were prepared by reactive direct current (DC) magnetron sputtering. Room-temperature FM was observed in all samples. It is found that the saturated magnetization has a direct correlation with the oxygen flow rate. Actually, the oxygen flow rate determines the atomic ratio of Cu (x) in the granular films. Thus, the magnetization varies with x. Fundamentally, the origin of FM could be understood by the Stoner model based on the charge transfer mechanism.
∗ Project supported by the National Natural Science Foundation of China (Grant Nos. 11104148,
51101088, and 51171082), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC37700 and 13JCQNJC02800), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110031110034), and the Fundamental Research Funds for the Central Universities, China. † Corresponding author. E-mail:
[email protected] ‡ Corresponding author. E-mail:
[email protected] © 2015 Chinese Physical Society and IOP Publishing Ltd http://iopscience.iop.org/cpb http://cpb.iphy.ac.cn
097504-1
Chin. Phys. B Vol. 24, No. 9 (2015) 097504 2. Experimental details Cux (Cu2 O)1−x granular films were deposited on the glass substrates, and Cu metal (99.99%) was used as the target. The base pressure of the vacuum chamber was below 5 × 10−5 Pa before Cux (Cu2 O)1−x deposition. During the sputtering, the pressure of chamber was kept at 0.8 Pa under Ar and O2 mixed ambient, the sample holder was rotated at 20 cycles per minute and the distance from the substrate to the Cu target was 12 cm. The samples were prepared at room temperature and the DC magnetron sputtering power was kept at 90 W, while the oxygen flow rate was controlled within 0–5.0 sccm. In this way, samples with different ratios x were prepared. The thickness (about 280 nm) of the samples was measured by profilometer (Dektak 6M). The structural information was characterized by transmission electron microscopy (TEM) (Tecnai G2 F20). The composition of the films was analyzed by x-ray photoelectron spectroscopy (XPS) (Perkin-Elmer PHi 5600). The magnetic properties of the samples were measured by Physical Property Measurement System (PPMS-9). The optical properties measurements were performed with spectrophotometer (UV-Visible/NIR, U-4100, Hitachi Inc.) for absorption spectra and spectrofluorometer (FL3-2-IHR221-NIRTCSPC, HORIBA Jobin Yvon Inc.) for photoluminescence (PL) spectra.
5.0 sccm. The reduction of x is consistent with the character of TEM images in Fig. 1. (a)
10 nm
10 nm (c)
10 nm
(d)
10 nm
Fig. 1. TEM images of the granular films sputtered in the different oxygen flow rates at (a) 2.0 sccm, (b) 3.0 sccm, (c) 3.4 sccm, and (d) 4.0 sccm, respectively.
3. Results and discussion Intensity/arb. units
XPS raw data fitting curve Cu+ Cu0
(a)
O2: 3.4 sccm
934
933 931 932 Binding energy/eV
1.0
(b)
0.8 0.6 x
Figure 1 shows the TEM images and the corresponding electron diffraction patterns of the samples prepared under the oxygen flow rates of 2.0 sccm, 3.0 sccm, 3.4 sccm, and 4.0 sccm, respectively. In Fig. 1(a), both Cu and Cu2 O phases can be clearly observed according to the electron diffraction pattern, which indicates that the granular film is composed of Cu and Cu2 O. The diffraction pattern of Cu fades away, while that of Cu2 O brightens gradually with increasing the oxygen flow rate as shown in Figs. 1(b) and 1(c). This tendency implies that the ratio of Cu2 O is enhanced in the granular films. When the oxygen flow rate reaches 4.0 sccm, the small fraction of Cu is difficult to be identified by TEM in Fig. 1(d), which means that the Cu2 O phase is dominant in this film. To further demonstrate the component change of these granular films and acquire the x value quantitatively in Cux (Cu2 O)1−x , the XPS data was used to calculate the atomic ratio of Cu. Figure 2(a) is the typical XPS data of the sample prepared under an oxygen flow rate of 3.4 sccm. The corresponding Gaussian fitting of metallic Cu and Cu+ peaks is marked by the dotted line and the dash-dotted line, respectively. The atomic ratio of Cu x in Cux (Cu2 O)1−x granular films can be calculated from the ratio of Cu peak area to total area. As shown in Fig. 2(b), x drops from 1.00 with the oxygen flow rate 0.0 sccm to 0.09 with the oxygen flow rate
(b)
0.4 0.2 0
0
x in Cux(Cu2O)1-x 1.0 2.0 3.0 4.0 Oxygen flow rate/sccm
5.0
Fig. 2. (color online) (a) The XPS data and the corresponding Gaussian fitting curves of metallic Cu and Cu+ of sample under oxygen flow rate of 3.4 sccm. (b) The atomic ratio of Cu x in Cux (Cu2 O)1−x under the different oxygen flow rates.
097504-2
Chin. Phys. B Vol. 24, No. 9 (2015) 097504 Figure 3 shows the magnetization (M–H) curves, where the raw data of the samples for different x is shown in Fig. 3(a). The M–H curve with x = 1.00 corresponds to the pure Cu sample. The linear diamagnetism signal of the pure Cu indicates that the samples are not contaminated by any magnetic impurities. After subtracting the diamagnetic background, the M–H curves are shown in Fig. 3(b), in which all of the samples possess room-temperature FM and the largest saturated magnetization is about 1.15 emu/cc at x = 0.61. As an estimate, the saturated magnetization is about 0.147 emu/g in Cu0.61 (Cu2 O)0.39 granular film without intentional magnetic doping, which is comparable to that in Cu2 O fine powder [25] and that in a transition metal doped Cu2 O system. [27] It is noticed that with the gradually decreasing x, the saturated magnetization first increases and then decreases, as shown in the inset of Fig. 3(b). This phenomenon may be understood by the change of x and the amount of defects in granular films, which will be addressed in the following text.
(a) . . -. -. -. -
Magnetization/(emu/cc)
. . .
x/. x/. x/. x/. x/. x/. x/.
-
- Magnetic field/kOe
-. -. -. -
-
. . . .
-
(b)
x/. x/. x/. x/. x/. x/.
Ms/(emu/cc)
Magnetization/(emu/cc)
.
.
x
.
.
Magnetic field/kOe Fig. 3. (color online) Room-temperature magnetization curves of Cux (Cu2 O)1−x granular films with different x. The original data is shown in panel (a) and the data subtracting background is shown in panel (b). The inset of panel (b) is the variation of saturation magnetization with the ratio x.
It is known that the FM is correlated with the defects in ODMS without transition metal impurities. To obtain the locations of defect levels in the band gap, the absorption spectra and the PL spectra are performed. The laser wavelength of excitation light in the PL measurement is 350 nm. In Fig. 4(a), α and hν represent the absorption coefficient and the energy of
the incident photon. Compared with the band gap of pristine Cu2 O (2.17 eV), all of the samples have shown enlarged band gaps from 2.78 eV to 3.04 eV. This blue shift is induced by the quantum confinement effect of Cu2 O nano-granular films. Since the band gap is enlarged as the nanoscale particle size reduces, the Cu2 O particle size in our granular films possibly becomes smaller with the increasing oxygen flow rate. Nonetheless, the maximum difference of the band gaps is only 0.26 eV within all fitting curves in Fig. 4(a), implying a minor variation of the particle size in these films. According to the relationship between the band gap and the Cu2 O particle size, [28] the estimated Cu2 O particle size is around 2.0 nm in all of the samples. Figures 4(b)–4(d) exhibit the PL spectra with the Gaussian fitting curves for samples at x = 0.63, 0.61, and 0.24, respectively. The main peak with the blue dashed line around 2.9 eV results from the near band-edge transition. The locations of the main peaks in Figs. 4(b)–4(d) are in accordance with the optical band gap calculated from absorption spectra in Fig. 4(a). Since the Cu vacancies in Cu2 O introduce an acceptor level about 0.4 eV above the valence band (VB) edge, the green peaks marked by dash-dotted line at 2.4–2.5 eV can be attributed to the electron transition from the conduction band (CB) edge to the Cu vacancies impurity level. [29,30] Besides, the peaks with an energy higher than 3.0 eV are associated with the transition from the sub-levels in the CB to the VB. These sub-levels are contributed by Cu 4p states, which have a close relationship with the interaction between neighboring Cu atoms. [31] As discussed above, the Cu vacancies are related with the low energy peaks (green) in Figs. 4(b)–4(d). The ratio, the area of the green peak divided by the total area of the PL spectra, is 42.7%, 45.4%, 29.3% for x = 0.63, 0.61, and 0.24, respectively. The variation tendency of the ratio for Cu vacancies is similar to the M–x curve in the inset of Fig. 3(b). Thus, the FM can mainly be attributed to the Cu vacancies. However, this does not mean that the magnetization linearly varies with the amount of Cu vacancies. For instance, the variation of magnetization is pronounced even though the minor difference in the Cu vacancy ratio between x = 0.63 and x = 0.61 samples, which probably arises from the different distributions and different contact areas of Cu and Cu2 O phases in the granular films. Actually, the FM observed in the granular films could be explained by the charge transfer ferromagnetism model proposed by Coey et al. [32,33] When the defect states exist near the Fermi level, the Stoner criterion for spontaneous FM is satisfied because the Fermi level is located at a peak within the defect states. Due to the different work functions of Cu (4.3– 4.6 eV) and Cu2 O (4.8 eV), [34–36] the electrons may transfer from Cu towards Cu2 O. As a result of the charge transfer, the Fermi level may shift to a new position, probably pinned at the defect states introduced by Cu vacancies. The work function difference 0.4 eV coincides with the relative location
097504-3
Chin. Phys. B Vol. 24, No. 9 (2015) 097504 of the Cu vacancy energy level based on the first principles calculation. [37,38] Consequently, the Fermi level is pinned at defect states and the spontaneous FM emerges. In our experiments, the FM can be modulated by the Cu/Cu2 O interface in granular films. When x decreases from 1.00 to around xc (0.61) with an increased O2 flow rate, the volume ratio of Cu2 O gradually increases. The interface area between Cu and Cu2 O grows, leading to a higher density of states value at the
Fermi level and an increased saturated magnetization due to a large amount of charge transfer. Below xc is the second stage. Although the volume ratio of Cu2 O keeps increasing, the contact interface area may reduce substantially since there is insufficient metal Cu to cover the surface of Cu2 O. Thus, the amount of the charge transfer shrinks, resulting in the decrease of the saturated magnetization, as shown in the inset of Fig. 3(b).
40
30
(b) Intensity/arb. units
(αhν)2/104 eV2Snm-2
(a) 2.78 eV, x=0.73 2.88 eV, x=0.63 2.95 eV, x=0.61
20
2.98 eV, x=0.24 3.04 eV, x=0.09
10
0 1.0
1.5
2.0 2.5 Energy/eV
3.0
3.5
2.0
2.4 2.8 Energy/eV
3.2
2.4 2.8 Energy/eV
3.2
(d) Intensity/arb. units
Intensity/arb. units
(c)
x=0.61
2.0
x=0.63
2.4 2.8 Energy/eV
x=0.24
2.0
3.2
Fig. 4. (color online) Panel (a) is the room-temperature absorption spectra. Panels (b)–(d) are PL spectra of samples with different x values at x = 0.63, 0.61, 0.24. Here, α and hν represent the absorption coefficient and the energy of the incident photon, respectively.
4. Summary
Acknowledgments
Cux (Cu2 O)1−x (0.09 6 x 6 1.00) granular films were prepared by reactive DC magnetron sputtering with different oxygen flow rates. The XPS data and TEM images prove that the films are composed of Cu and Cu2 O. The Cu vacancies in all of the samples are crucial in providing local defect states near the Fermi level for the charge transfer induced FM. By tuning the ratio of Cu/Cu2 O and their contact interface area, a vital route to control the magnetization is achieved. The room-temperature FM is observed in all of the films and the largest value of the saturated magnetization is 1.15 emu/cc. These results may offer further our understanding of the FM in undoped ODMS and they offer a relatively easy method to control the magnetization.
Wang Wei-Hua would like to thank Dr. Gong Cheng at UT Dallas and Dr. Xu Jian-Ping at Tianjin University of Technology for the fruitful discussion.
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097504-5
Chinese Physics B Volume 24
Number 8
October 2015
TOPICAL REVIEW — Silicene 086102
Silicene: from monolayer to multilayer — A concise review Li Hui, Fu Hui-Xia and Meng Sheng
086802
A review of the growth and structures of silicene on Ag (111)
086803
Wu Ke-Hui Fabrication and properties of silicene and silicene–graphene layered structures on Ir (111) Meng Lei, Wang Ye-Liang, Zhang Li-Zhi, Du Shi-Xuan and Gao Hong-Jun
086807
Chemical modification of silicene Wang Rong, Xu Ming-Sheng and Pi Xiao-Dong
087201
Silicene spintronics — A concise review Wang Yang-Yang, Quhe Ru-Ge, Yu Da-Peng and L¨u Jin
087302
Modulation of electronic properties with external fields in silicene-based nanostructures Li Geng, Zhao Yin-Chang, Zheng Rui, Ni Jun and Wu Yan-Ning
087303
Growth mechanism and modification of electronic and magnetic properties of silicene Liu Hong-Sheng, Han Nan-Nan and Zhao Ji-Jun
087308
Silicene on substrates: A theoretical perspective Zhong Hong-Xia, Quhe Ru-Ge, Wang Yang-Yang, Shi Jun-Jie and L¨u Jin
087309
Electronic structure of silicene
088105
L. C. Lew Yan Voon Silicene transistors — A review Quhe Ru-Ge, Wang Yang-Yang and L¨u Jin SPECIAL TOPIC — Silicene
086806
Domain boundaries in silicene: Density functional theory calculations on electronic properties Xiao Hong-Jun, Zhang Li-Zhi, Du Shi-Xuan and Gao Hong-Jun
087307
Comparison of electronic structure between monolayer silicenes on Ag (111) Chun-Liang Lin, Ryuichi Arafune, Maki Kawai and Noriaki Takagi
087503
Antiferromagnetic and topological states in silicene: A mean field study Liu Feng, Liu Cheng-Cheng and Yao Yu-Gui GENERAL
080201
Hamiltonian structure, Darboux transformation for a soliton hierarchy associated with Lie algebra 𝑠𝑜(4, C) Wang Xin-Zeng and Dong Huan-He
080202
New solutions from nonlocal symmetry of the generalized fifth order KdV equation Liu Xi-Zhong, Yu Jun and Ren Bo (Continued on the Bookbinding Inside Back Cover)
080203
Harmonic signal extraction from noisy chaotic interference based on synchrosqueezed wavelet transform Wang Xiang-Li and Wang Wen-Bo
080204
Fractional-order 𝐿𝛽 𝐶𝛼 filter circuit network Hong Zheng, Qian Jing, Chen Di-Yi and Herbert H. C. Iu
080301
Inverse problem of quadratic time-dependent Hamiltonians Guo Guang-Jie, Meng Yan, Chang Hong, Duan Hui-Zeng and Di Bing
080302
Wave–particle duality in a Raman atom interferometer Jia Ai-Ai, Yang Jun, Yan Shu-Hua, Hu Qing-Qing, Luo Yu-Kun and Zhu Shi-Yao
080303
Decay of 𝑁 -qubit GHZ states in Pauli channels Chen Xiao-Yu and Wang Ting-Ting
080304
Population dynamics of excited atoms in non-Markovian environments at zero and finite temperature Zou Hong-Mei and Fang Mao-Fa
080305
An optimized encoding method for secure key distribution by swapping quantum entanglement and its extension
080306
Gao Gan Faithful deterministic secure quantum communication and authentication protocol based on hyperentanglement against collective noise Chang Yan, Zhang Shi-Bin, Yan Li-Li and Han Gui-Hua
080307
Decoherence in optimized quantum random-walk search algorithm Zhang Yu-Chao, Bao Wan-Su, Wang Xiang and Fu Xiang-Qun
080308
Two-color laser modulation of magnetic Feshbach resonances Li Jian, Liu Yong, Huang Yin and Cong Shu-Lin
080401
The stability of Majorana fermion in correlated quantum wire Zhang De-Ping and Tian Guang-Shan
080501
Chaotic dynamics and its analysis of Hindmarsh–Rose neurons by Shil’nikov approach
080502
Wei Wei and Zuo Min Fractional-order systems without equilibria: The first example of hyperchaos and its application to synchronization Donato Cafagna and Giuseppe Grassi
080503
Secure communication based on spatiotemporal chaos Ren Hai-Peng and Bai Chao
080701
Molecular modeling of oscillating GHz electric field influence on the kinesin affinity to microtubule H. R. Saeidi, S. S. Setayandeh and A. Lohrasebi
080702
Design and fabrication of structural color by local surface plasmonic meta-molecules Ma Ya-Qi, Shao Jin-Hai, Zhang Ya-Feng, Lu Bing-Rui, Zhang Si-Chao, Sun Yan, Qu Xin-Ping and Chen Yi-Fang
080703
Piecewise spectrally band-pass for compressive coded aperture spectral imaging Qian Lu-Lu, L¨u Qun-Bo, Huang Min and Xiang Li-Bin (Continued on the Bookbinding Inside Back Cover)
ATOMIC AND MOLECULAR PHYSICS 083101
Spectral properties of endohedrally confined helium atom Fang Shuai-Shuai and Qiao Hao-Xue
083102
Electric dipole moment function and line intensities for the ground state of carbon monxide Chen Hua-Jun, Wu Jie, Liu Hao and Cheng Xin-Lu
083103
Electron impact excitation of helium atom Han Xiao-Ying, Zeng De-Ling, Gao Xiang and Li Jia-Ming
083104
State-to-state quantum dynamics of the N(4 S) + H2 (X1 Σ+ ) → NH(X3 Σ− ) + H(2 S) reaction and its reaction mechanism analysis Zhang Jing, Gao Shou-Bao, Wu Hui and Meng Qing-Tian
083201
Photodetachment of H− near a hard wall with arbitrary laser polarization direction Azmat Iqbal and A. Afaq
083202
Optically pumped quantum 𝑀𝑥 –𝑀𝑅 magnetometer with high oscillating magnetic field Ding Zhi-Chao, Yuan Jie, Wang Zhi-Guo, Yang Kai-Yong and Luo Hui
083203
Branching ratios of autoionization from Eu 4f7 6p1/2 6d [J] autoionizing states Yan Jun-Gang, Shen Li, Liang Hong-Rui and Dai Chang-Jian
083301
Study on the A2 Π3/2u , B2 ∆3/2u , and X2 Π3/2g states of Cl+ 2 including its isotopologues Wu Ling , You Su-Ping, Shao Xu-Ping, Chen Gang-Jin, Ding Ning, Wang You-Mei and Yang Xiao-Hua
083701
Atomic motion in the magneto–optical trap consisting of partially spatially coherent laser Zhang Bao-Wu, Wang Zhao-Ying, Kong De-Long and Lin Qiang
083702
Compensating for excess micromotion of ion crystals Du Li-Jun, Chen Ting, Song Hong-Fang, Chen Shao-Long, Li Hai-Xia, Huang Yao, Tong Xin, Guan Hua and Gao Ke-Lin ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS
084201
Switchable multi-wavelength fiber laser based on modal interference Ma Lin, Sun Jiang, Qi Yan-Hui, Kang Ze-Xin and Jian Shui-Sheng
084202
Characteristic of femtosecond laser-pulsed digital holography Shi Bing-Chuan, Wang Xiao-Lei, Guo Wen-Gang and Song Li-Pei
084203
Strong violations of locality by testing Bell’s inequality with improved entangled-photon systems Wang Yao, Fan Dai-He, Guo Wei-Jie and Wei Lian-Fu
084204
Double transmission peaks electromagnetically induced transparency induced by simultaneously exciting the electric and magnetic resonance in one unit cell Liu Si-Yuan, Zheng Bu-Sheng, Li Hai-Ming, Liu Xiao-Chun and Liu Shao-Bin
084205
Plasma induced by pulsed laser and fabrication of silicon nanostructures Hang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Huang Zhong-Mei, Miao Xin-Jian, Lv Quan and Qin Chao-Jian (Continued on the Bookbinding Inside Back Cover)
084206
Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber Xia Han-Ding, Li He-Ping, Lan Chang-Yong, Li Chun, Deng Guang-Lei, Li Jian-Feng and Liu Yong
084207
Effect of pulse width on near-infrared supercontinuum generation in nonlinear fiber amplifier Song Rui, Lei Cheng-Min, Chen Sheng-Ping, Wang Ze-Feng and Hou Jing
084208
Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser Song Yan-Rong, Guoyu He-Yang, Zhang Peng and Tian Jin-Rong
084209
Optical coherence transfer over 50-km spooled fiber with frequency instability of 2×10−17 at 1 s Ma Chao-Qun, Wu Li-Fei, Jiang Yan-Yi, Yu Hong-Fu, Bi Zhi-Yi and Ma Long-Sheng
084210
Evolution of dark solitons in the presence of Raman gain and self-steepening effect Yu Yu, Jia Wei-Guo, Yan Qing, Menke Neimule and Zhang Jun-Ping
084211
Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells Hamedi H R, Mehmannavaz M R and Afshari Hadi
084212
Optimizational 6-bit all-optical quantization with soliton self-frequency shift and pre-chirp spectral compression techniques based on photonic crystal fiber Li Sha, Wang Jian-Ping, Kang Zhe and Yu Chong-Xiu
084213
Estimation of random errors for lidar based on noise scale factor Wang Huan-Xue, Liu Jian-Guo and Zhang Tian-Shu
084214
Comparison between iterative wavefront control algorithm and direct gradient wavefront control algorithm for adaptive optics system Cheng Sheng-Yi, Liu Wen-Jin, Chen Shan-Qiu, Dong Li-Zhi, Yang Ping and Xu Bing
084301
Effects of core position of locally resonant scatterers on low-frequency acoustic absorption in viscoelastic panel Zhong Jie, Wen Ji-Hong, Zhao Hong-Gang, Yin Jian-Fei and Yang Hai-Bin
084401
Direct numerical simulation of viscoelastic-fluid-based nanofluid turbulent channel flow with heat transfer Yang Juan-Cheng, Li Feng-Chen, Cai Wei-Hua, Zhang Hong-Na and Yu Bo
084601
On the ascent of infinite dimensional Hamiltonian operators Wu De-Yu and Chen Alatancang
084701
A novel method of evaluating the lift force on the bluff body based on Noca’s flux equation Sui Xiang-Kun and Jiang Nan PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES
085201
Reactive oxygen species in plasma against E. coli cells survival rate Zhou Ren-Wu, Zhang Xian-Hui, Zong Zi-Chao, Li Jun-Xiong, Yang Zhou-Bin, Liu Dong-Ping and Yang Si-Ze
085202
Particle-in-cell simulation for different magnetic mirror effects on the plasma distribution in a cusped field thruster Liu Hui, Chen Peng-Bo, Zhao Yin-Jian and Yu Da-Ren (Continued on the Bookbinding Inside Back Cover)
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 086101
Extended x-ray absorption fine structure study of MnFeP0.56 Si0.44 compound Li Ying-Jie, Haschaolu W, Wurentuya, Song Zhi-Qiang, Ou Zhi-Qiang, Tegus O and Nakai Ikuo
086103
Irradiation effects of graphene and thin layer graphite induced by swift heavy ions Zeng Jian, Liu Jie, Zhang Sheng-Xia, Zhai Peng-Fei, Yao Hui-Jun, Duan Jing-Lai, Guo Hang, Hou Ming-Dong and Sun You-Mei
086104
Analytical model for describing ion guiding through capillaries in insulating polymers Liu Shi-Dong, Zhao Yong-Tao, Wang Yu-Yu, Stolterfoht N, Cheng Rui, Zhou Xian-Ming, Xu Hu-Shan and Xiao Guo-Qing
086201
Accurate calculations of the high-pressure elastic constants based on the first-principles Wang Chen-Ju, Gu Jian-Bing, Kuang Xiao-Yu and Yang Xiang-Dong
086301
First-principles verification of CuNNi3 and ZnNNi3 as phonon mediated superconductors Chen Jian-Yong and Wang Xing
086401
Bending-induced phase transition in monolayer black phosphorus Pan Dou-Xing, Wang Tzu-Chiang and Guo Wan-Lin
086601
Surface-charge-governed electrolyte transport in carbon nanotubes Xue Jian-Ming, Guo Peng and Sheng Qian
086701
Improvement of variational approach in an interacting two-fermion system Liu Yan-Xia, Ye Jun, Li Yuan-Yuan and Zhang Yun-Bo
086801
Contact angle hysteresis in electrowetting on dielectric Zhao Rui, Liu Qi-Chao, Wang Ping and Liang Zhong-Cheng
086804
Structured dark-field imaging for single nano-particles Chen Jian, Gao Kun, Wang Zhi-Li, Yun Wen-Bing and Wu Zi-Yu
086805
Indenter size effect on the reversible incipient plasticity of Al (001) surface: Quasicontinuum study Tang Dan, Shao Yu-Fei, Li Jiu-Hui, Zhao Xing and Qi Yang CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
087101
Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene Hu Bo
087202
Spin pumping through magnetic impurity effect Deng Wei-Yin, Sheng Li and Xing Ding-Yu
087301
Tunable multiple plasmon resonances and local field enhancement of nanocrescent/nanoring structure Wang Bin-Bing, Zhou Jun, Chen Dong, Fang Yun-Tuan and Chen Ming-Yang
087304
Charge trapping behavior and its origin in Al2 O3 /SiC MIS system Liu Xin-Yu, Wang Yi-Yu, Peng Zhao-Yang, Li Cheng-Zhan, Wu Jia, Bai Yun, Tang Yi-Dan, Liu Ke-An and Shen Hua-Jun (Continued on the Bookbinding Inside Back Cover)
087305
Hetero-epitaxy of 𝐿g = 0.13-µm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications Huang Jie, Li Ming, Zhao Qian, Gu Wen-Wen and Lau Kei-May
087306
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor Lv Yuan-Jieł, Feng Zhi-Hong, Gu Guo-Dong, Yin Jia-Yun, Fang Yu-Long, Wang Yuan-Gang, Tan Xin, Zhou Xing-Ye, Lin Zhao-Jun, Ji Zi-Wu and Cai Shu-Jun
087501
Evolution of structure and magnetic properties in PrCo5 magnet for high energy ball milling in ethanol Li Zhu-Bai, Lan Jian-Ting, Zhang Xue-Feng, Liu Yan-Li and Li Yong-Feng
087502
Magnetization plateaus and frequency dispersion of hysteresis on frustrated dipolar array Zhang You-Tian
087801
Synthesis and microwave absorption properties of graphene-oxide(GO)/polyaniline nanocomposite with gold nanoparticles Fu Chen, He Da-Wei, WangYong-Sheng, Fu Ming, Geng Xin and Zhuo Zu-Liang
087802
Influence of Al3+ doping on the energy levels and thermal property of the 3.5MgO·0.5MgF2 ·GeO2 :Mn4+ red-emitting phosphor Yuan Lin-lin, Zhang Xiao-Song, Xu Jian-Ping, Sun Jian, Jin Han, Liu Xiao-Juan, Li Lin-Lin and Li Lan
087803
Photoluminescence of rare-earth ion (Eu3+ , Tm3+ , and Er3+ )-doped and co-doped ZnNb2 O6 for solar cells Gao Sen-Pei, Qian Yan-Nan and Wang Biao INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
088101
Theoretical study of the effects of vacancy and oxygen impurity on Ti2 GaC Chen Jun-Jun, Duan Ji-Zheng, Zhao Da-Qiang, Zhang Jian-Rong, Yang Yang and Duan Wen-Shan
088102
A superhigh discharge capacity induced by a synergetic effect between high-surface-area carbons and a carbon paper current collector in a lithium–oxygen battery Luo Guang-Sheng, Huang Shi-Ting, Zhao Ning, Cui Zhong-Hui and Guo Xiang-Xin
088103
Path integral Monte Carlo study of (H2 )𝑛 @C70 (𝑛 = 1, 2, 3) Hao Yan, Zhang Hong and Cheng Xin-Lu
088104
Effects of Fe additive on diamond crystallization from carbonyl nickel powders-C system under HPHT condition Li Yong, Jia Xiao-Peng, Feng Yun-Guang, Fang Chao, Fan Li-Juan, Li Ya-Dong, Zeng Xiang and Ma Hong-An
088106
Molecular dynamics simulation on generalized stacking fault energies of FCC metals under preloading stress Zhang Liang, L¨u Cheng, Tieu Kiet, Zhao Xing, Pei Lin-Qing and Michal Guillaume
088107
Microwave dielectric properties of Nextel-440 fiber fabrics with pyrolytic carbon coatings in the temperature range from room temperature to 700 ◦ C Song Hui-Hui, Zhou Wan-Cheng, Luo Fa, Qing Yu-Chang and Chen Ma-Lin (Continued on the Bookbinding Inside Back Cover)
088401
Switching mechanism for TiO2 memristor and quantitative analysis of exponential model parameters Wang Xiao-Ping, Chen Min and Shen Yi
088501
Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs L¨u Kai, Chen Jing, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan and Wang Xi
088502
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment Li Pei, Guo Hong-Xia, Guo Qi, Zhang Jin-Xin, Xiao Yao, Wei Ying, Cui Jiang-Wei, Wen Lin, Liu Mo-Han and Wang Xin
088503
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide Liu Yuan, Chen Hai-Bo, Liu Yu-Rong, Wang Xin, En Yun-Fei, Li Bin and Lu Yu-Dong
088504
Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress Tang Lan-Feng, Yu Guang, Lu Hai, Wu Chen-Fei, Qian Hui-Min, Zhou Dong, Zhang Rong, Zheng You-Dou and Huang Xiao-Ming
088701
Theoretical study of interactions between striated cylindrical particles and membrane Wang Jing-Jing, Feng Jia-Wei and Ren Chun-Lai
088702
Stability of focal adhesion enhanced by its inner force fluctuation Mao Zhi-Xiu, Chen Xiao-Feng and Chen Bin
088703
Theoretical investigation on generating terahertz radiation from gas plasma induced by three-color ultrashort lasers Wang Cheng-Liang, Yang Zhen-Gang, Liu Jin-Song, Wang Sheng-Lie and Wang Ke-Jia
088704
Effect of focused ultrasound stimulation at different ultrasonic power levels on the local field potential power spectrum Yuan Yi, Lu Cheng-Biao and Li Xiao-Li
088901
Establishment, maintenance, and re-establishment of the safe and efficient steady-following state Pan Deng and Zheng Ying-Ping
088902
Oscillatory Shannon entropy in the process of equilibration of nonequilibrium crystalline systems A. Giri, Nilangshu K. Das and P. Barat
089201
A study of the early warning signals of abrupt change in the Pacific decadal oscillation Wu Hao, Hou Wei, Yan Peng-Cheng, Zhang Zhi-Sen and Wang Kuo
