U.S. Army Materials Technology Laboratory, Watertown, MA 02172 (USA). Abstract. Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si~ ...
Materials Science and Engineering, B12 (1992) 97-101
97
Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si I _ xGex/Si(100) O. Vancauwenberghe, O. C. Hellman, H. Herbots, W. J. T a n a n d J. L. O l s o n * Massachusetts Institute of Technology, Cambridge, MA 02139 (USA) W. J. C r o f t
U.S. Army Materials Technology Laboratory, Watertown, MA 02172 (USA)
Abstract Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si~ _xGe x grown by molecular beam epitaxy on Si(100) was investigatedat room temperature using ~80~÷ ion beams with energies Eion ranging from 100 eV to 1 keV. The dependence of phase formation and film properties upon ion energy was established. In the case of silicon,thin films of stoichiometric SiO2 are formed at each energy studied and their thicknessincreases from 39 to 70 A with increasing E~on. InsulatingGeO2can only be formed for Eio n
