Ultrafast Charge Transfer in MoS2/WSe2 p-n. Heterojunction. Bo Peng1,3,â , Guannan Yu2,â , Xinfeng, Liu2, Bo Liu1,Xiao Liang3, Lei Bi3, Longjiang Deng3,.
Supporting Information Ultrafast Charge Transfer in MoS2/WSe2 p-n Heterojunction Bo Peng1,3,†, Guannan Yu2,†, Xinfeng, Liu2, Bo Liu1, Xiao Liang3, Lei Bi3, Longjiang Deng3, Tze Chien Sum2,* and Kian Ping Loh1,* 1
Department of Chemistry and Centre for Advanced 2D Materials and Graphene
Research Centre, National University of Singapore, 3 Science Drive 3, Singapore 117543 2
School of Physical & Mathematical Sciences, Nanyang Technological University 21
Nanyang Link, Singapore 637371 3
National Engineering Research Center of Electromagnetic Radiation Control Materials
and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
E=0 -2
Energy Level (eV)
-3 -4
Vacuum GaSe MoTe2 GaS GaTe PtTe2 InTe MoSe2 -3.2 -3.22 PtSe2 InSe MoS -3.26 2 InS PtS -3.44 2 HfSe2 -3.58 -3.58 -3.91 HfS2 -3.97 -3.98 -3.81 -3.92 -4.02 -4.53 -4.56
-5
-7.08
-5.62
-5.95
-6.06
-7
-4.95
-5.12
-6
-6.13
-6.54 -6.98
-6.74
WS2 WSe2 -3.2 -3.47
-6.08
-6.28
WTe2 -3.35
-4.97
-5.46 -6.11
-6.8
-7.18
-8
Figure S1. Band edge positions of monolayer TMDCs. The band edge data are from previous reports1,2.
p m u p m n 0 0 5
0 . 1
e b o r p m n 0 5 6
8 . 0
2 e S W / 2 S o M
6 . 0
T / T
4 . 0 2 . 0 0 0 0 1
0 0 8
L M 0 2 0 S 6 s o p M
0 e 0 m 4 i T
0 0 2
0
︵ ︶
Figure S2. Dynamic evolution of transient absorption signals at the MoS2 A-exciton resonance (650 nm) upon 500 nm excitation in the MoS2/WSe2heterostructures (red circle) and isolated MoS2 flake (black square). MoS2 donates holes to WSe2 while captures electrons from it. The increasing decay time in the heterojunction indicates the spatial segregation of electrons and holes in two layers
a
b
Figu ure S3. a. M Microscope iimage of MooS2/WSe2 hheterojunctioon device. bb. Measuredd phottocurrent. T The negativee sign meanss the current is flowing from WSe2 to MoS2.
Refeerences: 1. H.L. Zhhuang, R.G. Hennig, J. P Phys. Chem m. C, 117 (20013) 20440--20445. 2 H.L. Zhhuang, R.G.. Hennig, Chhem. Mater., 25 (2013)) 3232-32388. 2.
