materials Article
Ion Beam Assisted Deposition of Thin Epitaxial GaN Films Bernd Rauschenbach 1,2, *, Andriy Lotnyk 1 , Lena Neumann 1,† , David Poppitz 1,‡ and Jürgen W. Gerlach 1 1
2
* † ‡
Leibniz Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany;
[email protected] (A.L.);
[email protected] (L.N.);
[email protected] (D.P.);
[email protected] (J.W.G.) Felix-Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany Correspondence:
[email protected]; Tel.: +49-341-235-2308 Now with MEA Engineering GmbH, 04109 Leipzig, Germany. Now with Fraunhofer Institute for Microstructure of Materials and Systems, 06120 Halle (Saale), Germany.
Received: 12 May 2017; Accepted: 21 June 2017; Published: 23 June 2017
Abstract: The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy