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Tall Triple-Gate Devices with TiN/HfO2 Gate Stack - IEEE Xplore
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Tall Triple-Gate Devices with TiN/HfO2 Gate Stack - IEEE Xplore
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triple gate devices with a MOCVD
TiN
/HfO2 gate stack. The transistors have physical gate lengths down to 40 nm, and 60 nm tall and 10 nm wide fins. We show ...
7A-2
108
4-900784-00-1
2005 Symposium on VLSI Technology Digest of Technical Papers
2005 Symposium on VLSI Technology Digest of Technical Papers
109
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