Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 Editors: F. Roozeboom
V. Narayanan
Eindhoven University of Technology, and TNO Technical Sciences Eindhoven, The Netherlands
IBM T. J. Watson Research Center Yorktown Heights, New York, USA
K. Kakushima
Tokyo Institute of Technology Yokohama, Kanagawa, Japan
Tokyo Institute of Technology Yokohama, Kanagawa, Japan
D.-L. Kwong Institute of Microelectronics Singapore
H. Iwai P. J. Timans Mattson Technology, Inc. Fremont, California, USA
E. P. Gusev Qualcomm Technologies, Inc. Santa Clara, California, USA
Sponsoring Divisions: Electronics and Photonics Dielectric Science & Technology
Published by
TM
The Electrochemical Society 65 South Main Street, Building D Pennington, NJ 08534-2839, USA tel 609 737 1902 fax 609 737 2743 www.electrochem.org
Vol. 53, No. 3
Copyright 2013 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey 08534-2839, USA Telephone 609.737.1902 Fax 609.737.2743 e-mail:
[email protected] Web: www.electrochem.org ISSN 1938-6737 (online) ISSN 1938-5862 (print) ISSN 2151-2051 (cd-rom) ISBN 978-1-62332-025-6 (Softcover) ISBN 978-1-60768-376-6 (PDF) Printed in the United States of America.
PREFACE On May 12-17, 2013, the international symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications3 will be held as a part of the 223rd Meeting of the Electrochemical Society. The venue is the City of Toronto (Ontario), the cultural, entertainment and financial capital of Canada. Since this new decade the organizers are redirecting and widening the scope of this annual and technology-driven symposium, which manifests in the new symposium title. The focus has transformed from traditional scaling in CMOS integrated circuit manufacturing (More Moore for short) into more diversification and embedded functionality (More than Moore) and end-of-CMOS and beyond-CMOS nanoelectronic devices and materials. Thus, the main objective is to address the latest advances in channel, gate stack and source/drain engineering for state-of-the-art CMOS integrated circuit manufacturing, next to advanced non-planar transistor structures and new exploratory areas such as 3D integration, MEMS & NEMS devices, which are adding functionalities to conventional CMOS devices. This book contains most of the papers presented at the symposium and focuses on new materials, processes and devices in nanofabrication. The book opens with the keynote address by Prof. S. Datta (Pennsylvania State University) on III-V Compound Semiconductor Field Effect Transistors. The other papers are arranged in several sections, starting with a section on planar silicon and silicon-germanium stressors and gate stack engineering. The next section of these transactions covers several topics in high-mobility channels. Here, the symposium felt honoured in hosting Prof. D. Misra from New Jersey Institute of Technology who gave the Electronics & Photonics Division Award Presentation. Novel non-planar devices are next, concerning structures based on new and innovative FINFET and nanowire designs. With the ever-continuing need for scaling, the patterning and lithography challenges are an obvious topic for the next section. The book ends with a section on Si channel gate stack reliability and last but not least, a section on 3D heterogeneous integration (especially Through-Silicon Via technology), resistive RAM, and MEMS technologies. As in earlier years, the organizers would like to express special thanks to all speakers, invited and contributing, for their interest in this symposium, and for submitting high-quality abstracts and preparing their manuscripts at short notice. Finally, the success of the symposium is greatly and positively influenced by the financial support given by the sponsoring ECS divisions, Electronics and Photonics (lead sponsor), Dielectric Science and Technology (co-sponsor) as well as the following industrial sponsors (at the time of printing of this book): Gelest (platinum sponsor), IBM, Mattson Technology, and Qualcomm. Their support and loyal sponsorship are highly appreciated, given the persisting worldwide economic downturn.
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F. Roozeboom, Eindhoven University of Technology, and TNO, Eindhoven, The Netherlands V. Narayanan, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA K. Kakushima, Tokyo Institute of Technology, Yokohama, Japan H. Iwai, Tokyo Institute of Technology, Yokohama, Japan D.-L. Kwong, Institute of Microelectronics, Singapore P. J. Timans, Mattson Technology, Inc., Fremont, California, USA E. P. Gusev, Qualcomm Technologies, Inc., Santa Clara, California, USA
April 2013
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ECS Transactions, Volume 53, Issue 3 Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
Table of Contents
Preface
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Chapter 1 Welcome and Plenary Session (Keynote) III-V Compound Semiconductor Field Effect Transistors for Low Power Digital Logic S. Datta, A. V. Thathachary, L. Liu, E. Hwang, A. Agrawal, N. Agrawal
3
Chapter 2 Planar Si and SiGe: Stressors/Gate Stack (Invited) The Past, Present and Future of High-k/Metal Gates K. Choi, T. Ando, E. A. Cartier, A. Kerber, V. Paruchuri, J. Iacoponi, V. Narayanan
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Investigation of Embedded SiGe Source/Drain for 28nm HKMG PFET Performance Enhancement E. M. Bazizi, A. Zaka, G. Dilliway, B. Bai, M. Wiatr, F. Benistant, M. Horstmann
27
Si-Passivation of Epitaxial SiGe: Kinetics and Impact on Morphology B. Seiss, D. Dutartre
33
Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two-Dimensional Electron Gases with Thin SiGe Cap Layers C. T. Huang, J. Y. Li, J. C. Sturm
45
Evaluation of Stress Induced by Plasma Assisted ALD SiN Film K. Nagata, M. Nagasaka, T. Yamaguchi, A. Ogura, H. Oji, J. Y. Son, I. Hirosawa, Y. Watanabe, Y. Hirota
51
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Chapter 3 High Mobility Channels (Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications E. Y. Chang, S. H. Tang, Y. C. Lin
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(Electronics & Photonics Division Award Presentation) Si-SiO2 Interface to High-K-Ge/III-V Interface: Passivation and Reliability D. Misra
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(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications S. Takagi, M. Yokoyama, S. H. Kim, R. Zhang, R. Suzuki, N. Taoka, M. Takenaka
85
(Invited) A Brief Review of Doping Issues in III-V Semiconductors K. S. Jones, A. G. Lind, C. Hatem, S. Moffatt, M. C. Ridgeway
97
Limiting Factors of Channel Mobility in III-V/Ge MOSFETs S. Takagi, S. H. Kim, R. Zhang, N. Taoka, M. Yokoyama, M. Takenaka
107
Chapter 4 Non-Planar Devices: FINFETS/Nanowires (Invited) Strain-Enhanced Performance of Si-Nanowire FETs M. Cassé, S. Barraud, R. Coquand, M. Koyama, D. Cooper, C. Vizioz, C. Comboroure, P. Perreau, V. Maffini-Alvaro, C. Tabone, L. Tosti, S. Barnola, V. Delaye, F. Aussenac, G. Ghibaudo, H. Iwai, G. Reimbold
125
Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures S. Siddiqui, M. M. Chowdhury, M. Brodsky, N. Rahim, M. Dai, S. Krishnan, S. Fugardi, E. Wu, A. Chou, S. Narasimha, J. Li, K. Mcstay, B. Linder, E. Maciejewski, R. Rettmann, S. Mittl, U. Kwon, V. Narayanan, W. Henson, D. Schepis, M. Chudzik
137
Defect Characterization of ALD Grown SiO2 Films: A Systematic Approach F. L. Pasquale, S. Swaminathan, H. Kang, A. Lavoie
147
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Chapter 5 Patterning and Lithography Challenges A Study of Polysilicon Gate Etch Uniformity in 300 mm Silicon Wafers W. S. Lau, P. Yang, S. Y. Siah
161
Visualization of Plasma Etching Damage of Si Using Room Temperature Spectroscopic Photoluminescence S. K. Jang Jian, C. C. Jeng, T. C. Wang, C. M. Huang, Y. L. Wang, W. S. Yoo
167
On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process R. Coquand, S. Monfray, J. Pradelles, L. Martin, M. P. Samson, J. Bustos, S. Barraud, F. Boeuf, T. Skotnicki, G. Ghibaudo, T. Poiroux, O. Faynot
177
Chapter 6 Si Channel: Gate Stack Reliability (Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides B. P. Linder, E. A. Cartier, S. Krishnan
187
Impact of Lanthanum on Positive-Bias Temperature Instability – Insight from First-Principles Simulation C. Gu, D. S. Ang
193
On the Evolution of Switching Oxide Traps in the HfO2/TiN Gate Stack Subjected to Positive- and Negative-Bias Temperature Stressing Y. Gao, D. S. Ang, C. J. Gu
205
Chapter 7 3D Integration/ReRAM/MEMS Adjustable Switching Voltage Via Sol-Gel Derived and Ag In Situ Doped SiO2 Thin Films for ReRAM Y. P. Hsiao, W. L. Yang, Y. H. Lin, Y. C. Yang, C. C. Hsu, C. L. Peng, C. H. Liao, F. T. Chin, S. H. Liu, Y. M. Chang, L. M. Lin
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223
On the Resistive Switching and Current Conduction Mechanisms of Amorphous LaGdO3 Films Grown by Pulsed Laser Deposition P. Misra, S. P. Pavunny, R. S. Katiyar
229
(Invited) Challenges in 3D Integration M. Koyanagi, K. W. Lee, T. Fukushima, T. Tanaka
237
InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process M. Lisker, A. Trusch, A. Krüger, M. Fraschke, P. Kulse, Y. Borokhovych, B. Tillack, I. Ostermay, T. Krämer, A. Thies, O. Krüger, F. J. Schmückle, V. Krozer, W. Heinrich
245
(Invited) Commercial CMOS-Integrated RF-MEMS A. Morris, S. Cunningham
255
Author Index
265
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Facts about ECS The Electrochemical Society (ECS) is an international, nonprofit, scientific, educational organization founded for the advancement of the theory and practice of electrochemistry, electronics, and allied subjects. The Society was founded in Philadelphia in 1902 and incorporated in 1930. There are currently over 7,000 scientists and engineers from more than 70 countries who hold individual membership; the Society is also supported by more than 100 corporations through Corporate Memberships. The technical activities of the Society are carried on by Divisions. Sections of the Society have been organized in a number of cities and regions. Major international meetings of the Society are held in the spring and fall of each year. At these meetings, the Divisions and Groups hold general sessions and sponsor symposia on specialized subjects. The Society has an active publication program that includes the following: Journal of The Electrochemical Society — (JES) is the leader in the field of electrochemical science and technology. This peer-reviewed journal publishes an average of 550 pages of 85 articles each month. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Journal of Solid State Science and Technology — (JSS) is one of the newest peer-reviewed journals from ECS launched in 2012. JSS covers fundamental and applied areas of solid state science and technology including experimental and theoretical aspects of the chemistry and physics of materials and devices. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Electrochemistry Letters — (EEL) is one of the newest journals from ECS launched in 2012. It is dedicated to the rapid dissemination of peer-reviewed and concise research reports in fundamental and applied areas of electrochemical science and technology. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Solid State Letters — (SSL) is one of the newest journals from ECS launched in 2012. It is dedicated to the rapid dissemination of peerreviewed and concise research reports in fundamental and applied areas of solid state science and technology. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Electrochemical and Solid-State Letters — (ESL) was the first rapid-publication electronic journal dedicated to covering the leading edge of research and development in the field of solid-state and electrochemical science and technology. ESL was a joint publication of ECS and IEEE Electron Devices Society. Volume 1 began July 1998 and contained six issues, thereafter new volumes began with the January issue and contained 12 issues. The final issue of ESL was Volume 16, Number 6, 2012. Preserved as an archive, ESL has since been replaced by SSL and EEL. Interface— Interface is an authoritative yet accessible publication for those in the field of solid-state and electrochemical science and technology. Published quarterly, this four-color magazine contains technical articles about the latest developments in the field, and presents news and information about and for members of ECS. ECS Meeting Abstracts— ECS Meeting Abstracts contain extended abstracts of the technical papers presented at the ECS biannual meetings and ECS-sponsored meetings. This publication offers a first look into the current research in the field. ECS Meeting Abstracts are freely available to all visitors to the ECS Digital Library. ECS Transactions— (ECST) is the online database containing full-text content of proceedings from ECS meetings and ECS-sponsored meetings. ECST is a high-quality venue for authors and an excellent resource for researchers. The papers appearing in ECST are reviewed to ensure that submissions meet generally-accepted scientific standards. Each meeting is represented by a volume and each symposium by an issue. Monograph Volumes — The Society sponsors the publication of hardbound monograph volumes, which provide authoritative accounts of specific topics in electrochemistry, solid-state science, and related disciplines. For more information on these and other Society activities, visit the ECS website:
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