Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 Editors: F. Roozeboom
V. Narayanan
Eindhoven University of Technology, and TNO Technical Sciences Eindhoven, The Netherlands
IBM T. J. Watson Research Center Yorktown Heights, New York, USA
K. Kakushima Tokyo Institute of Technology Yokohama, Kanagawa, Japan
E. P. Gusev Qualcomm Technologies, Inc. Santa Clara, California, USA
P. J. Timans Thermal Process Solutions, Ltd. Cambridge, United Kingdom
P. A. Kohl Georgia Institute of Technology Atlanta, Georgia, USA
O. M. Leonte Berkeley Polymer Technology Hayward, California, USA
Sponsoring Divisions: Electronics and Photonics Dielectric Science & Technology
Published by
TM
The Electrochemical Society 65 South Main Street, Building D Pennington, NJ 08534-2839, USA tel 609 737 1902 fax 609 737 2743 www.electrochem.org
Vol. 61, No. 3
Copyright 2014 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey 08534-2839, USA Telephone 609.737.1902 Fax 609.737.2743 e-mail:
[email protected] Web: www.electrochem.org ISSN 1938-6737 (online) ISSN 1938-5862 (print) ISSN 2151-2051 (cd-rom) ISBN 978-1-62332-162-8 (Hard Cover) ISBN 978-1-60768-518-0 (PDF) Printed in the United States of America.
PREFACE From May 12-14, 2014, the international symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 has been held as a part of the 225th Meeting of the Electrochemical Society. The venue was Orlando, Florida, the most visited US destination, nicknamed “The City Beautiful” and known as the theme-park capital of the world. The themes of this annual symposium continue to reflect the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short) combined with the opportunities from growing diversification and embedded functionality (More than Moore). Thus, the main objective is to address the latest advances in channel, gate stack and source/drain engineering for state-of-the-art CMOS integrated circuit manufacturing, next to advanced nonplanar transistor structures and new exploratory areas such as 3D integration, MEMS & NEMS devices, which are adding functionalities to conventional CMOS devices. This issue of ECS Transactions contains most of the papers presented at the symposium and focuses on new materials, processes and devices in nanofabrication. The papers are arranged in several sections, starting with a section on advanced processing for front-end-of-line and backend-of-line applications, including papers on atomic layer deposition and etching technology. The next section addresses new functional areas, including papers on graphene and tunnel-FETs. The symposium was also honored in hosting Prof. D. Hess from Georgia Institute of Technology who gave the Henry B. Linford Award for Distinguished Teaching Address covering the subject of “Low Temperature Plasma Etching of Copper, Silver, and Gold Films”. The next section covers emerging device architectures, concerning structures based on innovative FINFET, silicon-on-insulator and nanowire designs, where there are challenging issues in materials selection, contact technologies and device reliability. The following section includes papers featuring new options for CMOS channel materials, including germanium and III-V semiconductors. This issue of ECS Transactions concludes with a section on 3D heterogeneous integration (especially Through-Silicon Via technology) and MEMS technologies. As in earlier years, the organizers would like to express special thanks to all speakers, invited and contributing, for their interest in this symposium, and for submitting high-quality abstracts and preparing their manuscripts at short notice. Finally, the success of the symposium is greatly and positively influenced by the financial support given by the sponsoring ECS divisions, Electronics and Photonics (lead sponsor), Dielectric Science and Technology (co-sponsor) as well as the following industrial sponsors (at the time of printing of this book): Air Liquide, ASM International, Gelest, IBM, and Qualcomm. Their support and loyal sponsorship are highly appreciated, given the persisting worldwide economic downturn. iii
F. Roozeboom, Eindhoven University of Technology, and TNO, Eindhoven, The Netherlands V. Narayanan, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA K. Kakushima, Tokyo Institute of Technology, Yokohama, Japan P. J. Timans, Thermal Process Solutions Limited, Cambridge, United Kingdom E. P. Gusev, Qualcomm Technologies, Inc., Santa Clara, California, USA P. A. Kohl, Georgia Institute of Technology, Atlanta, Georgia, USA O. M. Leonte, Berkeley Polymer Technologies, Inc., Hayward, California, USA
May 2014
iv
ECS Transactions, Volume 61, Issue 3 Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4
Table of Contents
Preface
iii
Chapter 1 Advanced Processes for Front-End-of-Line/Back-End-of-Line Applications (Invited) Spatial ALD, Deposition of Al2O3 Films at Throughputs Exceeding 3000 Wafers per Hour E. H. A. Granneman, V. I. Kuznetsov, P. Vermont
3
Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects S. V. Nguyen, D. Priyadarshini, H. K. Shobha, T. J. Haigh, C. K. Hu, S. A. Cohen, E. Liniger, T. M. Shaw, E. D. Adams, J. Burnham, A. Madan, N. R. Klymko, C. Parks, D. Yang, S. E. Molis, Y. Lin, G. Bonilla, A. Grill, D. Edelstein, D. F. Canaperi, L. Q. Xia, S. Reiter, M. Balseanu, M. Y. Shek
17
High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, T. Ohmi
29
Atomic Layer Deposition of Sidewall Spacers: Process, Equipment and Integration Challenges in State-of-the-Art Logic Technologies M. P. Belyansky, R. Conti, S. Khan, X. Zhou, N. R. Klymko, Y. Yao, A. Madan, L. Tai, P. Flaitz, T. Ando
39
Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching H. Tanaka, T. Suwa, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
47
Raman Characterization of Poly-Si Channel Materials for 3D Flash Memory Device Applications W. S. Yoo, T. Ishigaki, T. Ueda, K. Kang, D. S. Sheen, S. S. Kim, M. S. Ko, W. S. Shin, N. Y. Kwak, B. S. Lee
55
v
Novel Poly Gate Shaping by Wet Etch Process in 2xnm NAND Flash Device and Beyond Y. M. Liao, H. Tai, W. T. Liu, H. M. Chang, W. C. Peng, T. H. Ying, C. H. Tang, C. C. Yang
63
Novel Clean Concept of Advanced Patterning Film (Amorphous Carbon) for Beyond 2xnm Generation Self-Aligned Double-Patterning (SADP) Process H. Tai, Y. M. Liao, W. T. Liu, W. C. Peng, T. H. Ying
67
Chapter 2 New Functional Areas (Invited) Quantum Capacitance Measurement of Bilayer Graphene K. Nagashio, K. Kanayama, T. Nishimura, A. Toriumi
75
(Invited) Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions K. Tomioka, T. Fukui
81
(Henry B. Linford Award for Distinguished Teaching Address) Low Temperature Plasma Etching of Copper, Silver, and Gold Films D. W. Hess
91
Formation of Large Grain Ge Single Crystal on Insulating Substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn) R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, M. Miyao
97
Chapter 3 Emerging Device Architectures-FINFETs/Extremely Thin SOI/Nanowires (Invited) Material Engineering for 7nm FinFETs V. Moroz, J. Huang, M. Choi, L. Smith
103
(Invited) Challenges in Contact Technologies for Planar/Non-Planar Si Technologies P. Adusumilli, E. Alptekin, N. Breil
111
Back Gate Bias Stressing on Extremely Thin SOI (ETSOI) MOSFETs with Gate Last Process Integration Z. Tang, B. Tang, L. Zhao, G. Wang, J. Xu, Y. Xu, H. Wang, D. Wang, J. Li, J. Yan, C. Zhao
119
vi
(Invited) Effect of SOI Substrate on CMOS Devices Reliability X. Federspiel, W. Arfaoui, D. Angot, F. Monsieur, M. Rafik, P. Mora, F. Cacho, D. Roy, V. Huard
127
Chapter 4 High Mobility Channels (Invited) Strained Germanium Nanowire MOSFET with Low-Parasitic Resistance Metal Source/Drain K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka
137
(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface C. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, A. Toriumi
147
(Invited) Reducing EOT and Interface Trap Densities of High-k/III-V Gate Stacks V. Chobpattana, T. Mates, W. Mitchell, J. Zhang, S. Stemmer
157
(Invited) P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS S. Madisetti, V. Tokranov, A. Greene, M. Yakimov, S. Sasaki, M. Hirayama, S. Novak, S. Bentley, A. Jacob, S. Oktyabrsky
163
(Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges M. Heuken
173
Chapter 5 3D Integration and Microsystems (Invited) 2.5D Advanced System-in-Package: Processes, Materials & Integration Aspects R. V. Shenoy, K. Y. Lai, E. Gusev
183
(Invited) Thin Film Technologies for Micro/Nano Systems; A Review H. W. van Zeijl
191
Precise Chemistry Control Using Cyclic Stripping Voltammetry for Improved through Silicon via Fill H. Shen, C. Uzoh, T. Dinan
207
vii
Analysis of High Aspect Ratio through Silicon via (TSV) Diffusion and Stress Impact Profile during 3D Advanced Integration L. Djomeni, T. Mourier, S. Minoret, S. Fadloun, J. P. Barnes, D. Rouchon, S. Burgess, A. Price, L. Vandroux, D. Mathiot
219
High Sensitivity, Positive Tone, Low-k Polynorbornene Dielectrics B. K. Mueller, J. Schwartz, A. Sutlief, P. A. Kohl
227
Low-Cost MEMS Packaging Using Polymer-Based Air-Gaps E. Uzunlar, P. A. Kohl
237
Positive Tone, Low-k Polynorbornene Dielectric Crosslinking J. Schwartz, B. K. Mueller, P. A. Kohl
243
Author Index
253
viii
Facts about ECS The Electrochemical Society (ECS) is an international, nonprofit, scientific, educational organization founded for the advancement of the theory and practice of electrochemistry, electronics, and allied subjects. The Society was founded in Philadelphia in 1902 and incorporated in 1930. There are currently over 7,000 scientists and engineers from more than 70 countries who hold individual membership; the Society is also supported by more than 100 corporations through Corporate Memberships. The technical activities of the Society are carried on by Divisions. Sections of the Society have been organized in a number of cities and regions. Major international meetings of the Society are held in the spring and fall of each year. At these meetings, the Divisions and Groups hold general sessions and sponsor symposia on specialized subjects. The Society has an active publication program that includes the following: Journal of The Electrochemical Society — (JES) is the leader in the field of electrochemical science and technology. This peer-reviewed journal publishes an average of 550 pages of 85 articles each month. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Journal of Solid State Science and Technology — (JSS) is one of the newest peer-reviewed journals from ECS launched in 2012. JSS covers fundamental and applied areas of solid state science and technology including experimental and theoretical aspects of the chemistry and physics of materials and devices. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Electrochemistry Letters — (EEL) is one of the newest journals from ECS launched in 2012. It is dedicated to the rapid dissemination of peer-reviewed and concise research reports in fundamental and applied areas of electrochemical science and technology. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Solid State Letters — (SSL) is one of the newest journals from ECS launched in 2012. It is dedicated to the rapid dissemination of peerreviewed and concise research reports in fundamental and applied areas of solid state science and technology. Articles are published online as soon as possible after undergoing the peer-review process. The online version is considered the final version and is fully citable with articles assigned specific page numbers within specific issues. The date of online publication is the official publication date of record. Electrochemical and Solid-State Letters — (ESL) was the first rapid-publication electronic journal dedicated to covering the leading edge of research and development in the field of solid-state and electrochemical science and technology. ESL was a joint publication of ECS and IEEE Electron Devices Society. Volume 1 began July 1998 and contained six issues, thereafter new volumes began with the January issue and contained 12 issues. The final issue of ESL was Volume 16, Number 6, 2012. Preserved as an archive, ESL has since been replaced by SSL and EEL. Interface— Interface is an authoritative yet accessible publication for those in the field of solid-state and electrochemical science and technology. Published quarterly, this four-color magazine contains technical articles about the latest developments in the field, and presents news and information about and for members of ECS. ECS Meeting Abstracts— ECS Meeting Abstracts contain extended abstracts of the technical papers presented at the ECS biannual meetings and ECS-sponsored meetings. This publication offers a first look into the current research in the field. ECS Meeting Abstracts are freely available to all visitors to the ECS Digital Library. ECS Transactions— (ECST) is the online database containing full-text content of proceedings from ECS meetings and ECS-sponsored meetings. ECST is a high-quality venue for authors and an excellent resource for researchers. The papers appearing in ECST are reviewed to ensure that submissions meet generally-accepted scientific standards. Each meeting is represented by a volume and each symposium by an issue. Monograph Volumes — The Society sponsors the publication of hardbound monograph volumes, which provide authoritative accounts of specific topics in electrochemistry, solid-state science, and related disciplines. For more information on these and other Society activities, visit the ECS website:
www.electrochem.org
